Aluminum Nitride Chip Carrier for Micro-electro-mechanical Sensor Applications

机译：氮化铝芯片载体，用于微机电传感器应用

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A commercially fabricated aluminum nitride chip carrier was evaluated for packaging various types of MEMS inertial sensors. They were successfully assembled and vacuum-sealed within A1N chip carriers and their pressures have remained stable for over one year. Aging tests were conducted under electrical bias at 85℃ and 85 %RH. The leakage currents were not as stable as those measured in alumina chip carriers and post test inspection of the A1N parts revealed etching of the ceramic between conductors.

机译：对商用氮化铝芯片载体进行了评估，以包装各种类型的MEMS惯性传感器。它们已成功地在A1N芯片载体中组装并真空密封，其压力已稳定超过一年。在85℃和85％RH的电偏压下进行老化测试。漏电流不如在氧化铝芯片载体中测得的电流稳定，对A1N部件的测试后检查显示，导体之间的陶瓷被腐蚀。

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来源
《Nano- and Microelectromechanical Systems (NEMS and MEMS) and Molecular Machines》|2002年|p.129-134|共6页
会议地点 Boston MA(US);Boston MA(US)
作者
T. F. Marinis; J. W. Soucy;
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作者单位

Draper Laboratory 555 Technology Square Cambridge, MA 02139-3563, U.S.A.;

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会议组织
原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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1. Integration of GaAs /ln_0.1Ga_0.9As/AIAs resonance tunneling heterostructures into micro-electro-mechanical systems for sensor applications [J] . Chenyang Xue, Jie Hu, Wendong Zhang, Physica status solidi . 2010,第2期

机译：将GaAs /ln_0.1Ga_0.9As/AIAs共振隧穿异质结构集成到传感器应用的微机电系统中
2. Integrated micro-electro-mechanical sensor development for inertial applications [J] . Allen J.J., Kinney R.D. IEEE Aerospace and Electronic Systems Magazine . 1998,第11期

机译：面向惯性应用的集成微机电传感器开发
3. Thermal oxidation properties of titanium nitride and titanium-aluminum nitride materials - A perspective for high temperature air-stable solar selective absorber applications [J] . Yin Y, Hang L, Zhang S, Thin Solid Films . 2007,第5期

机译：氮化钛和氮化钛铝材料的热氧化性能-高温空气稳定型太阳能选择性吸收器应用的观点
4. Aluminum nitride chip carrier for micro-electro-mechanical sensor applications [C] . T.F.Marinis, J.W.Soucy Materials Research Society Symposium . 2003

机译：用于微机电传感器应用的氮化铝芯片载体
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Aluminum Nitride Chip Carrier for Micro-electro-mechanical Sensor Applications

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