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Surface Oxide Effects on Static Fatigue of Polysilicon MEMS

机译：表面氧化物对多晶硅MEMS静态疲劳的影响

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Static fatigue - crack growth causing delayed failure under constant stress and involving stress corrosion cracking - was investigated in polysilicon MEMS using two different surface-micromachined devices. One exploited residual tensile stresses to create stress concentrations at micromachined notches, and the other involved a single-edge notched beam specimen integrated with an electrostatic comb-drive microactuator. Tests with both devices revealed that polysilicon is not susceptible to static fatigue in humid environments. However, when a relatively thick (45 to 140 nm) surface oxide was thermally grown on the microactuator devices, the specimens demonstrated delayed fracture in a humid ambient, presumably due to static fatigue of the surface SiO_2. The stress intensities at the resulting cracks in the SiO_2 were then sufficient to cause catastrophic crack propagation through the polysilicon specimens. The implications of our data on the issue of fatigue in polysilicon is discussed.
机译：静态疲劳-裂纹扩展导致在恒定应力下延迟失效并涉及应力腐蚀裂纹-在多晶硅MEMS中使用两种不同的表面微加工器件进行了研究。一种利用残余拉应力在微机械加工的缺口处产生应力集中，另一种则涉及与静电梳状驱动微致动器集成在一起的单边缺口梁试样。对这两种器件的测试表明，多晶硅在潮湿环境中不易受到静态疲劳的影响。但是，当在微致动器装置上热生长相对较厚（45至140 nm）的表面氧化物时，样品可能在潮湿的环境中出现延迟断裂，这可能是由于表面SiO_2的静态疲劳所致。然后，在SiO_2中产生的裂纹处的应力强度足以引起灾难性的裂纹传播通过多晶硅样品。讨论了我们的数据对多晶硅疲劳问题的影响。

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