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Scaling behavior and negative gain of NAPD

机译:NAPD的缩放行为和负增益

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摘要

The size-dependent and lamination-dependent I-V curves of nano-multiplication-region avalanche photodiode (NAPD) were measured with the sized of 100nm, 200nm, lμm, and 10μm. The gain increases with the decrease of the multiplication-region size and illumination power. These data indicate the NAPD possesses the advantages of high gain and high sensitivity. Negative gain was also found in this experiment.
机译:测量了纳米倍增区雪崩光电二极管(NAPD)的尺寸依赖性和层状依赖性I-V曲线,尺寸分别为100nm,200nm,1μm和10μm。增益随着乘法区域大小和照明功率的减小而增加。这些数据表明NAPD具有高增益和高灵敏度的优点。在该实验中也发现了负增益。

著录项

  • 来源
  • 会议地点 San Diego CA(US)
  • 作者单位

    Department of Electrical Engineering, University of California, Los Angeles, CA 90095 Beijing Optoelectronic Technology Lab, Beijing University of Technology, Beijing, 100022 China;

    Department of Electrical Engineering, University of California, Los Angeles, CA 90095;

    Department of Electrical Engineering, University of California, Los Angeles, CA 90095 Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109;

    Department of Electrical Engineering, University of California, Los Angeles, CA 90095;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 特种结构材料;
  • 关键词

    APD; negative gain; high-gain; high-sensitivity;

    机译:APD;负收益;高增益;高灵敏度;

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