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A wet chemistry approach to sub-micron, removable flip chip interconnects

机译:湿化学方法用于亚微米,可移动倒装芯片互连

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Higher performance is the main driver in the integrated circuit (IC) market, but along with added function comes the cost of increased input/output connections and larger die sizes. Space saving approaches aimed at solving these challenges includes two technologies; 3D stacking (3D-ICs) and flip chip assemblies. Emerging ICs require sub-micron scale interconnects which include vias for 3D-ICs and bump bonds for flip chips. Photolithographic techniques are commonly used to prepare templates followed by metal vapor deposition to create flip chip bump bonds. Both the lithography step and the metal properties required for bump bonding contribute to limiting this approach to a minimum bump size of ~10 μm. Here, we present a wet chemistry approach to fabricating uniform bump bonds of tunable size and height down to the nanoscale. Nanosphere lithography (NSL), a "soft" lithographic technique, is used to create a bump bond template or mask for nanoscale bumps. Electrochemical deposition is also used through photoresist templates to create uniform bump bonds across large area wafers or dies. This template approach affords bumps with tunable diameters from 100s of nanometers to microns (allowing for tunable interconnect pitch and via diameters) while the use of constant current electoplating gives uniform bump height over large areas (> 1 cm~2).
机译:更高的性能是集成电路(IC)市场的主要驱动力,但随着功能的增加,随之而来的是增加的输入/输出连接和更大的裸片尺寸的成本。旨在解决这些挑战的节省空间的方法包括两种技术: 3D堆叠(3D-IC)和倒装芯片组件。新兴的IC需要亚微米级的互连,其中包括3D-IC的通孔和倒装芯片的凸点键合。光刻技术通常用于准备模板,然后进行金属气相沉积以创建倒装芯片凸点键合。光刻步骤和凸点键合所需的金属性能都将这种方法限制在最小凸点尺寸约10μm。在这里,我们提出了一种湿化学方法来制造均匀的凸点键合,其大小和高度可调节至纳米级。纳米球光刻(NSL)是一种“软”光刻技术,用于创建用于纳米级凸点的凸点键合模板或掩模。电化学沉积也可通过光致抗蚀剂模板使用,以在大面积晶片或管芯上产生均匀的凸点键合。这种模板方法可提供直径从100纳米到微米可调的凸块(允许可调的互连间距和通孔直径),而使用恒定电流电镀可在大面积(> 1 cm〜2)上提供均匀的凸块高度。

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