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首页> 外文会议>Nanoepitaxy: Materials and devices V >Aluminum Oxide Coating for Post-growth Photo Emission Wavelength Tuning of Indium Phosphide Nanowire Networks
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Aluminum Oxide Coating for Post-growth Photo Emission Wavelength Tuning of Indium Phosphide Nanowire Networks

机译：用于磷化铟纳米线网络生长后光发射波长调谐的氧化铝涂层

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摘要

Semiconductor-oxide nanostructure devices can be a very intriguing material platform if optoelectronic properties of the original semiconductor nanostructures can be tuned by explicitly controlling properties of the oxide coating. This paper describes our finding that optical properties of semiconductor nanowires can be tuned by depositing a thin layer of metal oxide. In this experiment, indium phosphide nanowires were grown by metal organic chemical vapor deposition on silicon substrates with gold catalyst. The nanowires formed three-dimensional nanowire networks from which collective optical properties were obtained. The nanowire network was coated with an aluminum oxide thin film deposited by plasma-enhanced atomic layer deposition. We studied the dependence of the peak wavelength of photoluminescence spectra on the thickness of the oxide coatings. We observed continuous blue shift in photoluminescence spectra when the thickness of the oxide coating was increased. The observed blue shift is attributed to the Burstein-Moss effect due to increased carrier concentration in the nanowire cores caused by repulsion from an intrinsic negative fixed charge from the oxide surface. Samples were further characterized by scanning electron microscopy, transmission electron microscopy, and selective area diffractometry in an attempt to explain the physical mechanisms for the blue shift.
机译：如果可以通过显式控制氧化物涂层的特性来调整原始半导体纳米结构的光电特性，那么半导体氧化物纳米结构器件可以成为非常吸引人的材料平台。本文描述了我们的发现，即可以通过沉积金属氧化物薄层来调整半导体纳米线的光学特性。在该实验中，使用金催化剂通过在硅基板上进行金属有机化学气相沉积来生长磷化铟纳米线。纳米线形成三维纳米线网络，从中获得了集体的光学特性。纳米线网络涂有通过等离子体增强的原子层沉积法沉积的氧化铝薄膜。我们研究了光致发光光谱的峰值波长对氧化物涂层厚度的依赖性。当氧化物涂层的厚度增加时，我们在光致发光光谱中观察到连续的蓝移。观察到的蓝移归因于Burstein-Moss效应，这是由于纳米线芯中的载流子浓度增加所致，该载流子浓度是由于来自氧化物表面的固有负固定电荷的排斥而引起的。样品通过扫描电子显微镜，透射电子显微镜和选择性区域衍射法进一步表征，以试图解释蓝移的物理机理。

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  • 来源
    《Nanoepitaxy: Materials and devices V》|2013年|88200L.1-88200L.8|共8页
  • 会议地点 San Diego CA(US)
  • 作者

    David M. Fryauf; Junce Zhang; Kate J. Norris; Juan Diaz Leon; Nobuhiko P.Kobayashi;

  • 作者单位

    Baskin School of Engineering, University of California Santa Cruz, Santa Cruz, CA 95064, USA,Nanostructured Energy Conversion Technology and Research (NECTAR), Advanced Studies Laboratories, Univ. of California Santa Cruz - NASA Ames Research Center, Moffett Field, CA 94035, USA;

    Baskin School of Engineering, University of California Santa Cruz, Santa Cruz, CA 95064, USA,Nanostructured Energy Conversion Technology and Research (NECTAR), Advanced Studies Laboratories, Univ. of California Santa Cruz - NASA Ames Research Center, Moffett Field, CA 94035, USA;

    Baskin School of Engineering, University of California Santa Cruz, Santa Cruz, CA 95064, USA,Nanostructured Energy Conversion Technology and Research (NECTAR), Advanced Studies Laboratories, Univ. of California Santa Cruz - NASA Ames Research Center, Moffett Field, CA 94035, USA;

    Baskin School of Engineering, University of California Santa Cruz, Santa Cruz, CA 95064, USA,Nanostructured Energy Conversion Technology and Research (NECTAR), Advanced Studies Laboratories, Univ. of California Santa Cruz - NASA Ames Research Center, Moffett Field, CA 94035, USA;

    Baskin School of Engineering, University of California Santa Cruz, Santa Cruz, CA 95064, USA,Nanostructured Energy Conversion Technology and Research (NECTAR), Advanced Studies Laboratories, Univ. of California Santa Cruz - NASA Ames Research Center, Moffett Field, CA 94035, USA;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    nanowire; ALD; MOCVD; aluminum oxide; indium phosphide; photoluminescence; blue shift; Burstein-Moss shift;

    机译：纳米线ALD; MOCVD;氧化铝磷化铟光致发光蓝移布尔斯坦-莫斯移位;

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