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首页> 外文会议>Nanoepitaxy: Materials and devices V >Two-step growth and fabrication of thermoelectric devices employing indium phosphide nanowire networks
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Two-step growth and fabrication of thermoelectric devices employing indium phosphide nanowire networks

机译：采用磷化铟纳米线网络的两步生长和热电器件制造

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摘要

The ability to make a good electrical/thermal contact to a large area filled with semiconductor nanowires has been a major engineering challenge in developing this type of thermoelectric devices. A practical fabrication process of a top electrical/thermal contact onto a network of randomly oriented intersecting semiconductor nanowires was designed by implementing a sequence of two separated metal organic chemical vapor deposition processes for indium phosphide. In the first step, a nanowire network was grown on a substrate with indium phosphide nanowires grown axially. Subsequently, growth temperature and pressure were altered to change the axial growth to lateral growth that promoted the formation of indium phosphide extending over multiple nanowires. Possible growth mechanisms during the lateral growth and structural properties of the laterally grown segment will be discussed.
机译：在开发这种类型的热电器件时，与充满半导体纳米线的大面积进行良好的电/热接触的能力一直是一项主要的工程挑战。通过实施一系列用于磷化铟的两种分离的金属有机化学气相沉积工艺的序列，设计了顶部电/热接触到随机取向的相交半导体纳米线网络上的实际制造工艺。第一步，在轴向生长磷化铟纳米线的基板上生长纳米线网络。随后，改变生长温度和压力以将轴向生长改变为侧向生长，从而促进形成在多条纳米线上延伸的磷化铟。将讨论横向生长段期间的可能生长机理和横向生长段的结构特性。

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  • 来源
    《Nanoepitaxy: Materials and devices V》|2013年|88200Q.1-88200Q.6|共6页
  • 会议地点 San Diego CA(US)
  • 作者

    Kate J. Norris; Junce Zhang; David M. Fryauf; Nobuhiko P. Kobayashi;

  • 作者单位

    Baskin School of Engineering, University of California Santa Cruz, Santa Cruz, CA 95064 U.S.A,Nanostructured Energy Conversion Technology and Research (NECTAR), Advanced Studies Laboratories, Univ. of California Santa Cruz - NASA Ames Research Center, Moffett Field, CA 94035;

    Baskin School of Engineering, University of California Santa Cruz, Santa Cruz, CA 95064 U.S.A,Nanostructured Energy Conversion Technology and Research (NECTAR), Advanced Studies Laboratories, Univ. of California Santa Cruz - NASA Ames Research Center, Moffett Field, CA 94035;

    Baskin School of Engineering, University of California Santa Cruz, Santa Cruz, CA 95064 U.S.A,Nanostructured Energy Conversion Technology and Research (NECTAR), Advanced Studies Laboratories, Univ. of California Santa Cruz - NASA Ames Research Center, Moffett Field, CA 94035;

    Baskin School of Engineering, University of California Santa Cruz, Santa Cruz, CA 95064 U.S.A,Nanostructured Energy Conversion Technology and Research (NECTAR), Advanced Studies Laboratories, Univ. of California Santa Cruz - NASA Ames Research Center, Moffett Field, CA 94035;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
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  • 关键词

    Top contact; semiconductor on metal; metal organic chemical vapor deposition; vertical and horizontal growth;

    机译：最高联系人；金属上的半导体金属有机化学气相沉积；纵向和横向增长;

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