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首页> 外文会议>Nanomaterial Synthesis and Integration for Sensors, Electronics, Photonics, and Electro-Optics; Proceedings of SPIE-The International Society for Optical Engineering; vol.6370 >A computational study of carbon nanotube optoelectronic devices
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A computational study of carbon nanotube optoelectronic devices

机译：碳纳米管光电器件的计算研究

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Since the first demonstration of electroluminescence (EL) from a CNTFET about three year ago, significant progress has been achieved in CNT optoelectronics. We have developed semiclassical and quantum transport simulators for CNT optoelectronic devices. A self-consistent simulation, which couples a quantum treatment of the metal-CNT contacts to a semiclassical treatment of the channel, is performed to understand carrier transport and light emission in a CNT infrared emitter. The results show that when the channel is long, light emission significantly affects carrier transport, and reduces the source-drain current by a factor of 2 in ambipolar transport regime. The experimentally observed light-spot movement along the channel can be mostly understood and explained by a simple, semiclassical picture. The photoconductivity of carbon nanotube (CNT) Schottky barrier transistors is studied by solving the non-equilibrium Green's function transport equation. The model provides a detailed and coherent picture of electron-photon coupling and quantum transport effects. The photocurrent shows peaks at photon energies near the subband gaps, which can be engineered by controlling the CNT diameter. Electron-phonon coupling (ⅰ) slightly broadens the peaks, (ⅱ) leads to phonon-assisted photocurrent at certain energy ranges, and (ⅲ) changes the energy-resolved photocurrent. We also show that the metal/CNT barrier height has a much smaller effect on the photocurrent than on the dark current. We also show the important role of sub-bandgap impact ionization and excitation in CNT devices.
机译：自大约三年前从CNTFET首次展示电致发光（EL）以来，CNT光电技术已取得了重大进展。我们已经为CNT光电器件开发了半经典和量子传输模拟器。通过执行自洽仿真，将金属CNT接触的量子处理与通道的半经典处理耦合起来，以了解CNT红外发射器中的载流子传输和光发射。结果表明，当通道较长时，光发射会显着影响载流子传输，并且在双极传输方式下将源极-漏极电流减小2倍。沿通道实验观察到的光斑移动可以通过简单的半经典图片来大致理解和解释。通过求解非平衡格林函数输运方程，研究了碳纳米管（CNT）肖特基势垒晶体管的光电导性。该模型提供了电子-光子耦合和量子传输效应的详细且一致的图像。光电流在子带隙附近的光子能量处显示出峰值，可以通过控制CNT直径来进行工程设计。电子-声子耦合（ⅰ）略微加宽了峰，（ⅱ）在某些能量范围内产生了声子辅助的光电流，而（ⅲ）改变了能量分辨的光电流。我们还表明，金属/ CNT势垒高度对光电流的影响比对暗电流的影响小得多。我们还显示了子带隙碰撞电离和激发在CNT设备中的重要作用。

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