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首页> 外文会议>Nanomaterial Synthesis and Integration for Sensors, Electronics, Photonics, and Electro-Optics; Proceedings of SPIE-The International Society for Optical Engineering; vol.6370 >Growth and Characterization of single crystal InAs nanowire arrays and their application to plasmonics
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Growth and Characterization of single crystal InAs nanowire arrays and their application to plasmonics

机译：单晶InAs纳米线阵列的生长，表征及其在等离子体中的应用

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摘要

The growth of single crystal InAs nanowire arrays on crystalline and amorphous substrates is described. This method is quite simple and fast, and uses only a bare InAs substrate as a source and a gold colloid on the growth substrate. High quality InAs nanowires can be produced by this technique, with the nanowire diameter controllable by the gold colloid size and the nanowire length controlled by the growth time and growth temperature. By a proper choice of substrate, parallel, non-interacting nanowire arrays can be formed, as well as arrays exhibiting a cross-over geometry. These geometries can have a significant impact on the plasmonic properties, specifically on surface enhanced Raman (SERS). Results indicate a significantly enhanced SERS signal for nanowire arrays which contain wire crossings, which is explained in terms of electric field "hot" spots.
机译：描述了单晶InAs纳米线阵列在晶体和非晶衬底上的生长。该方法非常简单且快速，并且仅使用裸InAs衬底作为源，并在生长衬底上使用金胶体。可以通过这种技术生产高质量的InAs纳米线，其纳米线直径可通过金胶体大小控制，纳米线长度可通过生长时间和生长温度控制。通过适当选择衬底，可以形成平行的，不相互作用的纳米线阵列，以及表现出交叉几何形状的阵列。这些几何形状可能对等离子体性能，特别是对表面增强拉曼（SERS）产生重大影响。结果表明，包含导线交叉的纳米线阵列的SERS信号显着增强，这可以通过电场“热点”来解释。

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