• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Nanomaterial Synthesis and Integration for Sensors, Electronics, Photonics, and Electro-Optics; Proceedings of SPIE-The International Society for Optical Engineering; vol.6370 >Heterogeneous Integration of Semiconducting and Carbide Nanowires on Si Substrates
【24h】

Heterogeneous Integration of Semiconducting and Carbide Nanowires on Si Substrates

机译：硅衬底上半导体和碳化物纳米线的异质集成

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Integration of nanowires onto foreign substrates, and in functional devices, is widely recognized as a significant hurdle to further development of nanosystems based on quasi-one dimensional nanostructures. We describe methods for directly integrating relevant nanostructures on technologically relevant Si substrates using vapor phase synthesis of the nanowires. It is shown that ZnO nanowires may be directly integrated onto Si substrates containing patterned metal lines. Preferential growth from the edge of the metal lines has been achieved. We also show that growth of refractory transition metal carbides is also possible using catalytic growth. The electrical properties of such systems are also discussed. Finally, methods of integrating nanowires vertically on a Si substrate are also described.
机译：纳米线在异质衬底上以及功能器件中的集成被公认为是进一步发展基于准一维纳米结构的纳米系统的重要障碍。我们描述了使用纳米线的气相合成技术将相关的纳米结构直接整合到技术相关的硅基板上的方法。示出了ZnO纳米线可以直接集成到包含图案化金属线的Si衬底上。已经实现了从金属线边缘的优先生长。我们还表明，难熔过渡金属碳化物的生长也可能使用催化生长。还讨论了此类系统的电性能。最后，还描述了在Si基板上垂直集成纳米线的方法。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号