• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Nanotechnology-general >Ultrasmooth Gold as a Top Metal Electrode for Molecular Electronic Devices
【24h】

Ultrasmooth Gold as a Top Metal Electrode for Molecular Electronic Devices

机译：超光滑金作为分子电子设备的顶级金属电极

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

In the emerging area of molecular electronics, fabrication of reliable metallic contacts remains one of the most critical challenges. Nanotransfer printing (nTP) is an attractive low-cost non-destructive technique to provide contact to organic monolayers. This work introduces the use of ultrasmooth gold on polymeric substrates, fabricated by using an nTP-based method, as a novel means to form metal-molecule-silicon molecular electronic test structures. We have used self-assembly to fabricate high-quality COOH-terminated alkanethiols on ultrasmooth gold. Covalent bonding to the H-Si(111) substrate was achieved through the application of moderate pressure and temperature. Because of the critical role of molecular conformation on electrical properties, infrared spectroscopy was used to explore the influence of these two parameters (P,T) on molecular ordering. Moderate conditions effectively fabricate high-quality reproducible molecular electronic test structures preserving molecular conformation with molecules bonded to both electrodes. This work proves a useful strategy for the development of hybrid nanoelectronic devices.
机译：在新兴的分子电子领域，可靠的金属触点的制造仍然是最关键的挑战之一。纳米转移印刷（nTP）是一种吸引人的低成本无损技术，可提供与有机单层的接触。这项工作介绍了使用基于nTP的方法制造的聚合物表面上的超光滑金的使用，作为形成金属-分子-硅分子电子测试结构的新方法。我们已经使用自组装技术在超光滑的金表面上制备高质量的COOH封端的链烷硫醇。通过施加适度的压力和温度，可以将共价键结合到H-Si（111）衬底上。由于分子构象对电学性质的关键作用，红外光谱法被用来研究这两个参数（P，T）对分子有序性的影响。适度的条件有效地制造了高质量的可再现分子电子测试结构，该结构保留了分子结合到两个电极上的分子构象。这项工作证明了发展混合纳米电子器件的有用策略。

著录项

  • 来源
    《Nanotechnology-general》|2008年|139-146|共8页
  • 会议地点 Honolulu HI(US);Honolulu HI(US);Honolulu HI(US)
  • 作者

    M.Coll; C.A.Hacker; L.H. Miller; D.R.Hines; E.D. Williams; C.A.Richter;

  • 作者单位

    Semiconductor Electronics Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899,USA;

    Semiconductor Electronics Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899,USA;

    Semiconductor Electronics Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899,USA;

    Laboratory for Physical Sciences, University of Maryland, College Park, Maryland 20740,USA;

    Department of Physics and IPST, University of Maryland, College Park, MD 20742, USA;

    Semiconductor Electronics Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899,USA;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 特种结构材料;
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号