Hot carrier stress in 70-nm nMOSFET with various bias conditions

机译：各种偏置条件下70nm nMOSFET中的热载流子应力

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This study presents a 70-nm nMOSFET degradation by hot carrier stress. The DC performance drifts of the device due to hot carrier stress are examined experimentally before and after stress for a 70-nm nMOSFET. Although the substrate current of a 70-nm nMOSFET has different characteristics from that of a long channel device, it can be a good indicator of hot carrier stress. The industrial practice to estimate the device lifetime using the measured lifetime versus 1/VDS plot cannot be applied to a 70-nm nMOSFET, but the method using the substrate current is useful to for this application.

机译：这项研究提出了由于热载流子应力导致的70 nm nMOSFET退化。在70纳米nMOSFET施加应力之前和之后，通过实验检查了由于热载流子应力引起的器件直流性能漂移。尽管70纳米nMOSFET的衬底电流具有与长沟道器件不同的特性，但它可以很好地指示热载流子应力。使用测得的寿命/ 1 / VDS图来估计器件寿命的工业实践不能应用于70-nm nMOSFET，但是使用衬底电流的方法对该应用很有用。

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《Nanotechnology Materials and Devices Conference, 2006 IEEE》||P.320-321|共2页
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Hyun-Sik Choi; Seung-Ho Hong; Hee-Sung Kang; Yoon-Ha Jeong;
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中图分类工业技术;
关键词
70-nm nMOSFET; hot carrier stress; substrate current;

机译：70nm nMOSFET;热载流子应力;衬底电流;

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1. Impact of hot carrier degradation and positive bias temperature stress on lateral 4H-SiC nMOSFETs [J] . Gregor Pobegen, Thomas Aichinger, Alberto Salinaro, Materials science forum . 2014,第pta2期

机译：热载流子退化和正偏置温度应力对横向4H-SiC nMOSFET的影响
2. Impact of stress induced by stressors on hot carrier reliability of strained nMOSFETs [J] . K. C. Lin, M. J. Twu, P. C. Juan, International Journal of Nanotechnology . 2014,第1a4期

机译：应力源引起的应力对应变nMOSFET的热载流子可靠性的影响
3. Auger recombination-enhanced hot carrier degradation in nMOSFETs with a forward substrate bias [J] . Tsai C.-W., Chen M.-C., Ku S.-H., IEEE Transactions on Electron Devices . 2003,第4期

机译：具有正向衬底偏置的nMOSFET的俄歇复合增强热载流子退化
4. Hot carrier stress in 70-nm nMOSFET with various bias conditions [C] . Hyun-Sik Choi, Seung-Ho Hong, Hee-Sung Kang, IEEE Nanotechnology Materials and Devices Conference . 2006

机译：具有各种偏置条件的70-NM NMOSFET中的热载体应力
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7. Impact of Hot Carrier Degradation and Positive Bias Temperature Stress on Lateral 4H-SiC nMOSFETs [O] . Gregor Pobegen, Thomas Aichinger, Alberto Salinaro, 2014

机译：热载流量降解的影响和阳性偏置温度应激在侧向4H-SiC NMOSFET上

Hot carrier stress in 70-nm nMOSFET with various bias conditions

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