Characterization of domain switching behavior of MTJ cells using magnetic force microscopy(MFM) and H-R loop analysis

机译：使用磁力显微镜（MFM）和H-R回路分析表征MTJ细胞的域切换行为

获取原文

页面导航

摘要
著录项
相似文献
相关主题

摘要

Correlationship between electrical and magnetic properties of magnetic tunnel junction (MTJ) for Magnetic Random Access Memory(MRAM) was studied. MTJ (Ta/NiFeCr/PtMn/CoFe/Ru/CoFe/AlOx/CoFe/NiFe/Ta) was analyzed utilizing H-R loop and MFM images. We verified that the kink in H-MR loop comes from the vortex domain of free layer. In addition, we also observed a close relationship between domain switching behavior and anomalous H-R curve. These results would be useful for characterization of MTJ cell, thereby optimizing the process to realize the ultra high density MRAM.

机译：研究了用于磁性随机存取存储器（MRAM）的磁性隧道结（MTJ）的电和磁性能之间的相关性。利用H-R回路和MFM图像分析了MTJ（Ta / NiFeCr / PtMn / CoFe / Ru / CoFe / AlOx / CoFe / NiFe / Ta）。我们验证了H-MR回路中的扭结来自自由层的涡旋域。此外，我们还观察到域切换行为与异常H-R曲线之间存在密切关系。这些结果将有助于表征MTJ单元，从而优化实现超高密度MRAM的工艺。

著录项

来源
《Nanotechnology Materials and Devices Conference, 2006 IEEE》||P.618-619|共2页
会议地点
作者
Jinhee Heo; Kyohyeok Kim; Taewan Kim; Ilsub Chung;
展开▼
作者单位

展开▼
会议组织
原文格式 PDF
正文语种
中图分类工业技术;
关键词
aluminium compounds; chromium alloys; cobalt alloys; iron alloys; magnetic domains; magnetic force microscopy; magnetic hysteresis; magnetic storage; magnetic switching; magnetic tunnelling; manganese alloys; nickel alloys; platinum alloys; ruthenium; tantalum; H-R loo;

机译：铝化合物;铬合金;钴合金;铁合金;磁畴;磁力显微镜;磁滞;磁存储;磁开关;磁隧穿;锰合金;镍合金;铂合金;钌;钽; H-R loo;

相似文献

外文文献
中文文献
专利

1. Characterization of Domain Switching Behavior of MTJ Cells Using Magnetic Force Microscopy (MFM) and R–H Loop Analysis [J] . Jinhee Heo, Kyohyeok Kim, Taewan Kim, IEEE transactions on nanotechnology . 2008,第2期

机译：使用磁力显微镜（MFM）和R–H循环分析表征MTJ细胞的域切换行为
2. Domain Structure Analysis Using Magnetic Force Microscopy (MFM) in Sm_2Fe_(17)N_3 Fine Particle (2-3 mu m) Reacted with Zn Metal (I) [J] . Kurima Kobayashi, Mika Nakamura, Takahiro Akiya 粉体および粉末冶金 . 2003,第1期

机译：使用磁力显微镜（MFM）分析与锌金属反应的Sm_2Fe_（17）N_3细颗粒（2-3μm）的畴结构（I）
3. Domain Structure Analysis Using Magnetic Force Microscopy (MFM) in Sm_2Fe_(17)N_3 Fine Particle (2-3 mu m) Reacted with Zn Metal (I) [J] . Kurima Kobayashi, Mika Nakamura, Takahiro Akiya 粉体および粉末冶金 . 2003,第1期

机译：使用磁力显微镜（MFM）在SM_2FE_（17）中的域结构分析（17）N_3细颗粒（2-3μm）与Zn金属反应（i）
4. Characterization of Domain Switching Behavior of MTJ Cells Using Magnetic Force Microscopy (MFM) and H-R loop Analysis [C] . Jinhee Heo, Kyohyeok Kim, Taewan Kim, IEEE Nanotechnology Materials and Devices Conference . 2006

机译：使用磁力显微镜（MFM）和H-R循环分析MTJ细胞域切换行为的表征
5. Magnetic Domain Imaging: A Comparison Between Lorentz Transmission Electron Microscopy and Magnetic Force Microscopy. [D] . Hua, Shan. 2015

机译：磁畴成像：洛伦兹透射电子显微镜和磁力显微镜之间的比较。
6. A compact model for magnetic tunnel junction (MTJ) switched by thermally assisted Spin transfer torque (TAS + STT) [O] . Weisheng Zhao, Julien Duval, Jacques-Olivier Klein, 2011

机译：通过热辅助自旋传递转矩（TAS + STT）切换的磁性隧道结（MTJ）的紧凑模型
7. Domain Structure Analysis Using Magnetic Force Microscopy (MFM) in Sm2Fe17N3 Fine Particle (2-3 .MU.m) Reacted with Zn Metal. (I). [O] . Kurima Kobayashi, Mika Nakamura, Takahiro Akiya, 2003

机译：使用磁力显微镜（MFM）在SM2FE17N3细颗粒（2-3μm）中的域结构分析与Zn金属反应。（一世）。

Characterization of domain switching behavior of MTJ cells using magnetic force microscopy(MFM) and H-R loop analysis

摘要

著录项

相似文献

相关主题

期刊订阅