Simulations of Schottky-barrier nanowire field effect transistors

机译：肖特基势垒纳米线场效应晶体管的仿真

获取原文

页面导航

摘要
著录项
相似文献
相关主题

摘要

Quantum simulations of Schottky-barrier silicon nanowire field effect transistors and carbon nanotube field effect transistors have been carried out by solving the Poisson''s equation and non-equilibrium Green''s function self-consistently and their devic

机译：肖特基势垒硅纳米线场效应晶体管和碳纳米管场效应晶体管的量子仿真是通过自洽求解泊松方程和非平衡格林函数及其装置来进行的

著录项

来源
《Nanotechnology Materials and Devices Conference, 2006 IEEE》|2006年|P.552-553|共2页
会议地点 GyeongjuKorea (South)
作者
Jaehyun Lee; Chiyui Ahn; Mincheol Shin;
展开▼
作者单位

展开▼
会议组织
原文格式 PDF
正文语种
中图分类
关键词
Green''s function methods; Poisson equation; Schottky barriers; carbon nanotubes; field effect transistors; nanoelectronics; nanotube devices; nanowires; Poisson equation; Schottky-barrier silicon nanowire field effect transistors; carbon nanotube field effect tra;

机译：格林函数方法；泊松方程肖特基势垒碳纳米管；场效应晶体管；纳米电子学纳米管器件；纳米线;泊松方程肖特基势垒硅纳米线场效应晶体管；碳纳米管场效应曲线;

相似文献

外文文献
中文文献
专利

1. Virtually dopant-free CMOS: Midgap Schottky-barrier nanowire field-effect-transistors for high temperature applications [J] . F. Wessely, T. Krauss, U. Schwalke Solid-State Electronics . 2012,第期

机译：几乎无掺杂的CMOS：用于高温应用的Midgap肖特基势垒纳米线场效应晶体管
2. Schottky-barrier lowering in silicon nanowire field-effect transistors prepared by metal-assisted chemical etching [J] . M. Zaremba-Tymieniecki, Z. A. K. Durrani Applied Physics Letters . 2011,第10期

机译：通过金属辅助化学刻蚀制备的硅纳米线场效应晶体管中的肖特基势垒降低
3. Multiscale modeling of nanowire-based Schottky-barrier field-effect transistors for sensor applications [J] . Nozaki D., Kunstmann J., Z?rgiebel F., Nanotechnology . 2011,第32期

机译：基于纳米线的肖特基势垒场效应晶体管在传感器应用中的多尺度建模
4. Simulations of Schottky-barrier nanowire field effect transistors [C] . Jaehyun Lee, Chiyui Ahn, Mincheol Shin, IEEE Nanotechnology Materials and Devices Conference . 2006

机译：肖特基屏障纳米线效应晶体管的模拟
5. Full Band Monte Carlo Simulation of Nanowires and Nanowire Field Effect Transistors [D] . Hathwar, Raghuraj. 2016

机译：纳米线和纳米线场效应晶体管的全带蒙特卡罗模拟
6. A Simulation Study of a Gate-All-Around Nanowire Transistor with a Core–Insulator [O] . Yannan Zhang, Ke Han, Jiawei Li 2020

机译：带芯-绝缘子的全栅纳米线晶体管的仿真研究
7. Schottky-barrier lowering in silicon nanowire field-effect transistors prepared by metal-assisted chemical etching [O] . Zaremba-Tymieniecki M, Durrani ZAK 2011

机译：通过金属辅助化学蚀刻制备的硅纳米线场效应晶体管中的肖特基势垒降低
8. Characterization of Enhanced Schottky-Barrier InGaAs/Al(x)Ga(1-X)As Strained Channel Modulation-Doped Field-Effect Transistors [R] . Lott, J. A. 1987

机译：增强肖特基势垒InGaas / al（x）Ga（1-X）作为应变通道调制掺杂场效应晶体管的表征

Simulations of Schottky-barrier nanowire field effect transistors

摘要

著录项

相似文献

相关主题

期刊订阅