Optical absorption cross section and quantum efficiency of a single silicon quantum dot

著录项

• 来源
  《Nanotechnology VI》|2013年|876607.1-876607.6|共6页
• 会议地点 Grenoble(FR)
• 作者

  F. Sangghaleh; B. Bruhn; I. Sychugov; J. Linnros;

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• 作者单位

  Materials and Nanophysics, School of ICT, KTH Royal Institute of Technology, SE-164 40 Kista, Sweden;

  Materials and Nanophysics, School of ICT, KTH Royal Institute of Technology, SE-164 40 Kista, Sweden;

  Materials and Nanophysics, School of ICT, KTH Royal Institute of Technology, SE-164 40 Kista, Sweden;

  Materials and Nanophysics, School of ICT, KTH Royal Institute of Technology, SE-164 40 Kista, Sweden;

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• 会议组织
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  Single silicon quantum dot; absorption cross section; quantum efficiency(QE); photoluminescence(PL)decay; luminescence rise time; silicon nanocrystals;

  机译：单硅量子点；吸收截面量子效率（QE）光致发光（PL）衰减;发光上升时间；硅纳米晶体;