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首页> 外文会议>NATO Advanced Research Workshop on Molecular Nanowires and Other Quantum Objects; 20030907-09; Bled(SI) >HOLE BAND ENGINEERING IN SELF-ASSEMBLED QUANTUM DOTS AND MOLECULES
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HOLE BAND ENGINEERING IN SELF-ASSEMBLED QUANTUM DOTS AND MOLECULES

机译：自组装量子点和分子的孔带工程

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摘要

The electronic structure in type-Ⅱ self-assembled quantum dots and molecules are discussed. As an example we consider disk-shaped InP/GaInP quantum dots. Depending on the thickness of the quantum dot holes are located inside (pillar case) or outside (flat-dot case), which implies that by varying the dot size one can engineer the position of the holes to establish either type-Ⅰ or type-Ⅱ confinement. In quantum-dot molecules we find that the strain leads to an upward shift of the lowest energies in all explored electron shells in both the double and triple dot molecules in the case of thick spacers, while for thin spacers the quantum mechanical coupling prevails, and a downward shift is observed. The exciton states are found to be strongly influenced by holes, which are able to turn bonding behavior of exciton levels into antibonding in a certain range of spacer thickness. The diamagnetic shift is computed for the coupled quantum dots, and the theoretical results are compared with available magneto-photoluminescence data.
机译：讨论了Ⅱ型自组装量子点和分子的电子结构。作为示例，我们考虑盘状InP / GaInP量子点。根据量子点的厚度，孔位于内部（柱状壳体）或外部（平坦点状壳体），这意味着通过改变点的大小，可以设计孔的位置以建立Ⅰ型或－型Ⅱ禁闭。在量子点分子中，我们发现，在较厚的间隔子的情况下，应变导致双点和三点分子中所有探索的电子壳中最低能量的向上移动，而对于较薄的间隔子，则存在量子力学耦合，并且观察到向下移动。发现激子状态受到空穴的强烈影响，空穴能够在间隔物厚度的一定范围内将激子能级的键合行为转变为反键。计算耦合量子点的反磁位移，并将理论结果与可用的磁光致发光数据进行比较。

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