A new opportunity of probing lateral distortions in quantum wells

机译：探索量子阱中横向畸变的新机会

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The in-plane distortions of quantum well structures as revealed by polarised luminescence are studied. It is shown that C_(2v) distortions induce an extreme anisotropy of the in-plane g factor of quantum confined heavy holes. The anisotropy of the linear poarisation of the photoluminescence turns out to be much less pronounced in structures with a special buffer layer introduced to stop spreading misfit dislocations.

机译：研究了极化发光揭示的量子阱结构的面内畸变。结果表明，C_（2v）畸变引起量子约束重孔的面内g因子的极端各向异性。事实证明，在引入特殊缓冲层以阻止扩展错配位错的结构中，光致发光的线性极化的各向异性要小得多。

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《NATO Advanced Research Workshop on Optical Properties of Semiconductor Nanostructures Jaszowiec, Poland 12-16 June 1999》|1999年|p.309-313|共5页
会议地点 Jaszowiec(PL)
作者
A. V. Koudinov; Yu. G. Kusrayev; I. G. Aksyanov; B. P. Zakharchenya; T. Wojtowicz; G. Karczewski; J. Kossut;
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正文语种 eng
中图分类无线电电子学、电信技术;
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A new opportunity of probing lateral distortions in quantum wells

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