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首页> 外文会议>NATO Advanced Research Workshop on Optical Properties of Semiconductor Nanostructures Jaszowiec, Poland 12-16 June 1999 >Magnetic field induced insulating phase in twodimensional electron gas in InGaAs/InP with strong disorder
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Magnetic field induced insulating phase in twodimensional electron gas in InGaAs/InP with strong disorder

机译：磁场在InGaAs / InP中二维电子气中的绝缘相具有强无序性

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摘要

Here we report on the results of our study of the properties of the magnetic field-induced insulating phase in a two-dimensional electron gas in InGaAs/InP heterostructures. These structures are characterised by a much greater disorder potential than AlGaAs/GaAs heterostructures due to the inherent alloy disorder in the InGaAs layer. At millikelvin temperatures, below a Landau level filling factor of 0.35-0.45, signs of a magnetic field-induced insulating phase (Wigner solid?) were seen in this system with large disorder: divergent resistivity, nonlinear current-voltage characteristics with a threshold, and a transition from non-activated to activated transport were observed. A model is proposed for the ordering of electrons in spite of the strong disorder.
机译：在这里，我们报告了我们在InGaAs / InP异质结构中的二维电子气中磁场诱导的绝缘相的性质研究的结果。这些结构的特征在于，由于InGaAs层中固有的合金无序性，其杂乱电位比AlGaAs / GaAs异质结构大得多。在Millikelvin温度下，在Landau水平填充因子低于0.35-0.45的情况下，在该系统中出现了磁场感应的绝缘相（维格纳固体？）的迹象，出现了较大的混乱：发散电阻率，具有阈值的非线性电流-电压特性，并观察到了从非活化转运到活化转运的转变。尽管存在很强的无序性，但仍提出了一种用于电子有序的模型。

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