首页> 外文会议>NATO Advanced Research Workshop on Optical Properties of Semiconductor Nanostructures Jaszowiec, Poland 12-16 June 1999 >Homogeneous linewidth of optical transitions and electronic energy relaxation in quantum dots
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Homogeneous linewidth of optical transitions and electronic energy relaxation in quantum dots

机译:量子点中光跃迁和电子能量弛豫的均匀线宽

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There is an increasing interest in the properties of nanostructures, in which the carrier motion is confined in all three dimensions, as in self-assembled quantum dots and nanocrystallite quantum dots [1]. The reason for this interest lies, for example, in the properies of the 0D (zero-dimensional) structures, which promise efficient low-treshhold current lasers for optoelectronic applications. One of the practical problems in this respect is the question of the rapidity of the relaxation of the excited electronic subsystem and thequestion of the width of the optical line. It is the aim of theoretical and experimental studies to answer the question of which properties of 0D objects are inherent properties of these structures, and which are determined or influenced by the technological process.
机译:人们越来越关注纳米结构的性质,其中载流子运动被限制在所有三个维度上,如自组装量子点和纳米微晶量子点[1]。引起这种兴趣的原因在于,例如0D(零维)结构的特性,它有望为光电应用提供高效的低阈值电流激光器。在这方面的实际问题之一是被激发的电子子系统的弛豫的速度和光线路的宽度的问题。理论和实验研究的目的是回答以下问题:0D对象的哪些属性是这些结构的固有属性,哪些受工艺过程确定或影响。

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