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首页> 外文会议>NATO Advanced Study Institute on Magnetic Storage Systems Beyond 2000, Jun 25-Jul 7, 2000, Rhodes, Greece >ENHANCEMENT OF COERCIVITY INDUCED BY FILM MORPHOLOGY CHANGES IN Co/Cu MULTILAYERS
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ENHANCEMENT OF COERCIVITY INDUCED BY FILM MORPHOLOGY CHANGES IN Co/Cu MULTILAYERS

机译：Co / Cu多层膜中膜形态变化引起的矫顽力的增强

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This study shows that the obtained differences among class A, B and C MLs are due to different degrees of Co-Cu intermixing at the interfaces and to different geometric factors of the grains. Both are crucial for the obtained (T/T_0)/sinh(T/T_0) dependence of interlayer coupling because an increase of the fraction of small grain sizes increases the film roughness. However, the obtained increase of T_0 as we move from class A to C MLs can be understood only if we consider it as a thermal blocking or spin-freezing energy that depends on the concentration of Co loose-spins near the interfaces, rather than as velocity of the carriers at the stationery points of the spacer Fermi surface. Thus, it is the thermal activation energy, which decouples magnetically the residual Co spins at the interfaces due to Co-Cu intermixing, that causes the desired lowering of H_s at room temperature. On the other hand, it is the decrease of M_s from the magnetic decoupling of interfacial Co spins, which lowers the magnetostatic energy at grain boundaries above the T_B, that causes the softening of H_c and H_(peak) values observed in figures 1 and 2 respectivelly. Thus, the degree of H_c and H_(peak) softening scales with the density of grain boundaries (or the fraction of smaller grain sizes) present in the developed microstructure. The experimental results indicate that the spin structure of the examined Co/Cu MLs is not stable above the obtained T_0 or T_B values because the lowering of dipolar (magnetostatic) interactions at grain boundaries can create a secondary short-range order state where domain walls fluctuate infinitely.
机译：这项研究表明，获得的A，B和C类ML之间的差异是由于界面处Co-Cu混合程度不同以及晶粒的几何因素不同所致。两者对于获得层间耦合的（T / T_0）/ sinh（T / T_0）依赖性都是至关重要的，因为小晶粒尺寸分数的增加会增加膜的粗糙度。但是，只有当我们将其视为热阻滞或自旋冻结能量（取决于界面附近Co松线的浓度），而不是将其从A类转移到C ML时，T_0的增加才能理解。间隔物费米表面的固定点处的载流子速度。因此，正是由于热活化能，由于Co-Cu混合而使界面处的残留Co自旋磁性解耦，从而导致室温下H_s的期望降低。另一方面，是由于界面Co自旋的磁解耦引起的M_s的减小，降低了T_B上方晶界处的静磁能，从而导致了图1和2中观察到的H_c和H_（peak）值变软。分别地。因此，H_c和H_（峰值）的软化程度与所形成的微结构中存在的晶界密度（或较小晶粒尺寸的分数）成比例。实验结果表明，所检查的Co / Cu MLs的自旋结构在获得的T_0或T_B值以上不稳定，因为晶界处偶极（静磁）相互作用的降低会产生二级短程有序状态，畴壁会发生波动无限地。

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