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首页> 外文会议>NATO Advanced Study Institute on Magnetic Storage Systems Beyond 2000, Jun 25-Jul 7, 2000, Rhodes, Greece >PATTERNED MAGNETIC THIN FILMS FOR ULTRA HIGH DENSITY RECORDING
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PATTERNED MAGNETIC THIN FILMS FOR ULTRA HIGH DENSITY RECORDING

机译：图案化的磁性薄膜，用于超高密度记录

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摘要

The areal bit density of magnetic disk recording has increased since 1990 60% per year and even in the last years 100%. Extrapolation of these rates leads to recording parameters not likely to be achieved without changes in the present way of storing hard disk data. One of the possible solutions is the development of so-called patterned magnetic media. Such media will also shift the superparamagnetic limit positively in comparison with the present thin film media. Theoretically, a bit density in the order of Tbits/in2 may be possible by using this so-called discrete magnetic recording scheme. The patterned structures presented in this paper consist of a regular two-dimensional array of single domain dots with large uniaxial magnetic anisotropy and have been prepared from CoNi/Pt multilayers with strong intergranular exchange coupling and large perpendicular magnetic anisotropy. For the preparation of the patterned media, a patterning process based on Laser Interference Lithography method (LIL) and Ion Beam Etching has been developed. This technology provides the possibility to pattern 2-D arrays of submicron dots smaller than the critical size for the transition from multi to single domain. The smallest prepared dot sizes are 60 nm with a center-to-center dot spacing of 200 nm and thickness of 30 nm. The magnetic characterization of these dots showed that they are single domain with reasonable coercivity and good thermal stability. Micromagnetic simulations show that the single domain state is the lowest energy state for dots with a diameter below 75nm, which confirms the experimental observations.
机译：自1990年以来，磁盘记录的面位密度每年增加60％，甚至在最近几年中都增加了100％。这些速率的外推导致在不改变当前存储硬盘数据的方式的情况下不可能获得记录参数。一种可能的解决方案是所谓的图案化磁介质的开发。与当前的薄膜介质相比，这种介质还将使超顺磁极限正向移动。理论上，通过使用这种所谓的离散磁记录方案，可以达到Tbits / in2量级的位密度。本文提出的图案化结构由具有大单轴磁各向异性的单畴点的规则二维阵列组成，并且是由具有强晶间交换耦合和大垂直磁各向异性的CoNi / Pt多层制备的。为了制备图案化的介质，已经开发了基于激光干涉光刻法（LIL）和离子束蚀刻的图案化工艺。该技术提供了图案化小于从多域到单域过渡的临界尺寸的亚微米点的二维阵列的可能性。制备的最小点尺寸为60 nm，中心点间距为200 nm，厚度为30 nm。这些点的磁性表征表明它们是具有合理矫顽力和良好热稳定性的单畴。微磁模拟表明，对于直径小于75nm的点，单畴态是最低的能量态，这证实了实验观察。

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