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MAGNETIZATION REVERSAL AND ANISOTROPY IN EXCHANGE COUPLED STRUCTURES

机译:交换耦合结构中的磁化反转和各向异性

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摘要

This work presents results on the temperature dependence of the hysteretic processes of glass / Co oxide (20 nm) / Permalloy (20 nm) / Cu (1.5 - 7.5 nm) / Permalloy (20 nm) / Ni oxide (20 nm) layered structures grown with RF sputtering. The magnetic characterization of the samples was carried out by means of vibrating sample magnetometry and longitudinal Kerr effect measurements. The antiferromagnetic behavior of the oxides below their blocking temperatures lead to the apparition of unidirectional anisotropy and enhancement of coercivity in the Permalloy (Py) layers. The temperature dependence of the coercivity and the hysteresis loop shift observed after field cooling the structures indicates the occurrence of blocking processes at the Co oxide/Py (200 K) and Ni oxide/Py interfaces (350 K). The magnetization reversal process is affected by the exchange coupling between the Py layers through the Cu interlayer. Both ferromagnetic layers remain uncoupled for Cu thickness between 3 and 7.5 nm. In the case of Cu thickness below 3 nm, the biasing effect of the Ni oxide layer at room temperature is overpassed by the effect of the interlayer coupling.
机译:这项工作提出了玻璃/氧化钴(20 nm)/坡莫合金(20 nm)/铜(1.5-7.5 nm)/坡莫合金(20 nm)/氧化镍(20 nm)层状结构的滞后过程对温度的依赖性的结果用射频溅射生长。样品的磁性表征是通过振动样品磁力测定法和纵向克尔效应测量进行的。氧化物在其阻断温度以下时的反铁磁行为会导致在坡莫合金(Py)层中出现单向各向异性并增强矫顽力。磁场冷却结构后观察到的矫顽力和滞后回线位移的温度依赖性表明在Co氧化物/ Py(200 K)和Ni氧化物/ Py界面(350 K)处发生了阻塞过程。磁化反转过程受到Py层之间通过Cu中间层的交换耦合的影响。对于3至7.5 nm的Cu厚度,两个铁磁层均保持不耦合状态。在Cu厚度小于3nm的情况下,层间耦合的作用超过了室温下的Ni氧化物层的偏置作用。

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