首页> 外文会议>NATO Advanced Study Institute on New Trends in Intercalation Compounds for Energy Storage, Sep 22-Oct 2, 2001, Sozopol, Bulgaria >STRUCTURAL AND ELECTROCHEMICAL PROPERTIES OF V_2O_5 THIN FILMS OBTAINED BY ATOMIC LAYER CHEMICAL VAPOR DEPOSITION (ALCVD)
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STRUCTURAL AND ELECTROCHEMICAL PROPERTIES OF V_2O_5 THIN FILMS OBTAINED BY ATOMIC LAYER CHEMICAL VAPOR DEPOSITION (ALCVD)

机译:原子层化学气相沉积(ALCVD)获得的V_2O_5薄膜的结构和电化学性质

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摘要

There is growing interest in producing thin film lithium batteries for microelectronic applications. The vanadium pentoxide (V_2O_5) is a compound of high interest having found use in a wide range of applications. Among them is its use as a rechargeable cathodic material in lithium batteries. V_2O_5 thin films were deposited by several methods (sol-gel, sputtering, chemical vapor deposition and pulse-laser deposition). In this study, we use for the first time the atomic layer chemical vapor deposition (ALCVD) as deposition method for V_2O_5 films.
机译:生产用于微电子应用的薄膜锂电池的兴趣日益浓厚。五氧化二钒(V_2O_5)是一种高度关注的化合物,已发现其用途广泛。其中之一是用作锂电池中的可充电阴极材料。通过几种方法(溶胶-凝胶,溅射,化学气相沉积和脉冲激光沉积)沉积V_2O_5薄膜。在这项研究中,我们首次使用原子层化学气相沉积(ALCVD)作为V_2O_5膜的沉积方法。

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