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首页> 外文会议>NATO Advanced Study Institute on Photovoltaic and Photoactive Materials - Properties, Technology and Applications Sep 9-21, 2001 Sozopol, Bulgaria >PHOTOELECTROCHEMICAL CHARACTERIZATION OF SOME ARGYRODITE-TYPE MATERIALS
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PHOTOELECTROCHEMICAL CHARACTERIZATION OF SOME ARGYRODITE-TYPE MATERIALS

机译：某些钠铁矿型材料的光化学表征

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摘要

Materials from the "argyrodite"family (general formula: A_((12-n-x)/m) BX_(6-x)Y_x, where A~(m+)= Cu, Ag, Cd, Hg; B~(n+) = P, Ge, Si; X = S, Se; Y = Cl, Br, I) have a wide variety of properties. Among the argyrodites, there are high-efficiency photoconductors with various band-gaps (Cd_4GeSe_6, Cd_4SiSe_6, Cd_4GeS_6) and superionic materials Cu_6PS_5Y; Y ― Cl, Br, I). All argyrodites containing Cu~+ and Ag~+ meet the structural requirements for efficient ionic transport - partial occupancy of a sublattice by ions of high mobility in the structurally disordered high-temperature phase. The electrical and ionic conductivities of argyrodites vary in a wide range - from purely electronic conductivity (Cd_4GeSe_6, Cd_4SiSe_6, Cd_4GeS_6), through mixed conductivity (Ag_8GeS_6, Ag_8GeSe_6, Cu_6PS_5I, Cu_6PSe_5I) to nearly purely ionic conductivity (Cu_6PS_5CI, Cu_6PS_45BΓ). This vide variety of electrical properties make argyrodites prospective candidates for applications as photoelectrode materials, solid state batteries, high capacity electrochemical devices - ionistors - and others. On the other hand, the ion mobility in electronically conducting compounds, if they are subjected to electrical or chemical potential gradients, especially under high illumination or at high temperatures, may lead to the degradation and instability of devices. Hence, there is a large interest in investigating the electrochemical processes in mixed conductors, and in developing detailed models for the degradation of commonly used electronic materials. We present here the results of an electrochemical and photoelectrochemical investigation of Cd_4GeSe_6, Cd_4SiSe_6, Cd_4GeS_6, Ag_8GeS_6, Ag_8GeSe_6 and Cu_6 PS_5I electrodes.
机译：来自“菱镁矿”系列的材料（通用公式：A _（（12-nx）/ m）BX_（6-x）Y_x，其中A〜（m +）= Cu，Ag，Cd，Hg； B〜（n +）= P，Ge，Si； X = S，Se； Y = Cl，Br，I）具有多种特性。在菱镁矿中，具有带隙（Cd_4GeSe_6，Cd_4SiSe_6，Cd_4GeS_6）和超离子材料Cu_6PS_5Y的高效光电导体。 Y-Cl，Br，I）。所有含有Cu〜+和Ag〜+的银辉石都满足有效离子迁移的结构要求-在结构紊乱的高温相中，高迁移率的离子部分占据亚晶格。菱镁矿的电导率和离子电导率在很宽的范围内变化-从纯电子电导率（Cd_4GeSe_6，Cd_4SiSe_6，Cd_4GeS_6）到混合电导率（Ag_8GeS_6，Ag_8GeSe_6，Cu_6PS_5I，Cu_6PSe_5I）（几乎是纯电导率）。这种丰富的电性能使其成为光电极材料，固态电池，高容量电化学装置-电离电阻等应用的潜在候选。另一方面，如果导电化合物受到电势或化学势梯度的影响，尤其是在高光照或高温下，其离子迁移率可能会导致设备性能下降和不稳定。因此，人们对研究混合导体中的电化学过程以及开发用于降解常用电子材料的详细模型有着极大的兴趣。我们在这里介绍Cd_4GeSe_6，Cd_4SiSe_6，Cd_4GeS_6，Ag_8GeS_6，Ag_8GeSe_6和Cu_6 PS_5I电极的电化学和光电化学研究结果。

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