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SLiM-Cut thin silicon wafering with enhanced crack and stress control

机译：SLiM-Cut薄硅片具有增强的裂纹和应力控制能力

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The 'Stress induced Lift-off Method' (SLiM-Cut) is a kerf-free method for thin silicon fabrication, being developed at imec for photovoltaic applications [1]. This method makes particularly efficient use of bulk material, thus cutting down the Si cost.rnSLIM-Cut uses a metallic layer on top of thick silicon substrate. The bonding is achieved at high temperature. Quenching the assembly down to room temperature builds up stress inside the material. The system relaxes by propagating a crack parallel to the metal-silicon interface. The propagation of this crack over the entire surface allows the formation of a silicon foil. The choice of the stress inducing layer is of the utmost importance: (1) the interfacial strength has to be high enough for the crack to grow in the Si lattice, (2) the metal migration has to be limited in order not to compromise the PV conversion efficiency, and (3) the deposition method of the stressing layer should be compatible with PV cell processing.rnThe focus is laid on the two main compromises of the technology today: the precise control of the stress applied to the substrate, and the metal-Si interface.rnRegarding the control of the stress applied, we have intentionally initiated the crack. Better control of the crack propagation was demonstrated. Tuning of the temperature becomes therefore possible and lift-off was achieved for temperature processing as low as 700°C. Although all crystal orientations (including <100>) have been successfully lifted-off, the choice of the crystal orientation influences strongly the final result.rnRegarding the metal-Si interface, a detailed elemental study has enabled us to identify the composition of the interface layers responsible for good adhesion to the Si. This investigation is also the first step to the engineering of specific paste and cleaning solutions.
机译：“应力感应剥离法”（SLiM-Cut）是用于薄硅制造的无切口方法，是由imec开发用于光伏应用的[1]。这种方法特别有效地利用了块状材料，从而降低了Si成本。rnSLIM-Cut在厚硅衬底的顶部使用了金属层。结合是在高温下实现的。将组件淬火至室温会在材料内部产生应力。该系统通过传播平行于金属-硅界面的裂纹来放松。该裂纹在整个表面上的蔓延允许形成硅箔。应力诱导层的选择至关重要：（1）界面强度必须足够高，以使裂纹在Si晶格中生长；（2）必须限制金属迁移，以不损害合金的强度。 PV转换效率，以及（3）应力层的沉积方法应与PV电池工艺兼容.rn重点放在当今技术的两个主要折衷点上：精确控制施加到基板上的应力，以及关于控制应力，我们有意引发了裂纹。证明了对裂纹扩展的更好控制。因此，温度调节成为可能，并且对于低至700°C的温度处理，都可以实现剥离。尽管所有晶体取向（包括<100>）均已成功解除，但晶体取向的选择对最终结果影响很大。对于金属-Si界面，详细的元素研究已使我们能够确定界面的组成层对硅具有良好的附着力。这项调查也是特定浆料和清洁解决方案工程的第一步。

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