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首页> 外文会议>Novel in-plane semiconductor lasers IX >Unique lasing mechanism of localized dispersive nanostructures in InAs/InGaAlAs quantum dash broad interband laser
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Unique lasing mechanism of localized dispersive nanostructures in InAs/InGaAlAs quantum dash broad interband laser

机译：InAs / InGaAlAs量子破折宽宽带激光器中局部分散纳米结构的独特激射机理

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The authors report on the nanowires-like and nanodots-like lasing behaviors in addition to multiple-wavelength interband transitions from InAs/InAlGaAs quantum dash (Qdash) lasers in the range of ～1550 nm. The presence of lasing actions simultaneously from two different dash ensembles, after postgrowth intermixing for crystalline quality improvement, indicate the absence of optical phonon emission due to the small variation in quantized interband transition energies. This effect is reproducible and shows different lasing characteristics from its quantum dot and quantum wire laser counterparts. Furthermore, the small energy spacing of only 25 nm (at center lasing wavelength of ～1550 nm) and the subsequent quenching of higher energy transition states at higher bias level in Qdash lasers suggest the absence of excited-state transition in highly inhomogeneous self-assembled Qdash structures. However, the appearance of a second lasing line in a certain range of high injection level, which is due to the presence of different sizes of dash assembles, corresponds to the transition from smaller size of Qdash ensembles in different planar active medium. This unique transition mechanism will affect the carrier dynamics, relaxation process in particular and further indicates localized finite carrier lifetime in all sizes of Qdash ensembles. These phenomena will lead to important consequences for the ground-state lasing efficiency and frequency modulation response of Qdash devices. In addition, these imply that proper manipulation of the Qdash ensembles will potentially result in localized nanolasers from individual ensemble and thus contributing towards enormously large envelope lasing coverage from semiconductor devices.
机译：作者报道了InAs / InAlGaAs量子破折号（Qdash）激光器在约1550 nm范围内的多波长带间跃迁以及类似纳米线和类似纳米点的激光行为。在生长后混合以改善晶体质量后，来自两个不同破折号组合的激光动作同时存在，这表明由于量化的带间跃迁能的微小变化，没有光学声子发射。这种效应是可重现的，并且显示出与其量子点和量子线激光器对应物不同的激光发射特性。此外，Qdash激光器的能量间距仅为25 nm（中心激光波长为〜1550 nm），随后在较高的偏置水平下以较高的偏置水平淬灭了较高的能量跃迁态，这表明在高度不均匀的自组装中不存在激发态跃迁Qdash结构。然而，由于存在不同尺寸的仪表板组件，在高注入水平的一定范围内出现第二激光线，对应于在不同的平面活性介质中从较小尺寸的仪表板组件过渡。这种独特的过渡机制将特别影响载流子动力学，尤其是弛豫过程，并进一步表明在所有大小的Qdash集合体中，局部有限的载流子寿命。这些现象将对Qdash器件的基态激光发射效率和频率调制响应产生重要影响。另外，这些暗示对Qdash集成体的正确操作将潜在地导致单个集合体中的局部纳米激光，从而有助于从半导体器件获得极大的包络激光发射。

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