Sb-based laser sources grown by molecular beam epitaxy on silicon substrates

机译：通过分子束外延在硅衬底上生长的基于锑的激光源

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The material system comprising GaSb, InAs, AlSb and their related alloys are an impressive toolbox for device designers, as they offer a very large choice of band-gaps and band offsets. Molecular beam epitaxy (MBE) and device processing have been improving quickly over recent years, allowing the fabrication of high performance devices as quantum cascade lasers, mid-infrared (MIR) edge emitting and surface emitting lasers, superlattice infrared photodetectors, but also very high speed / low consumption AlSb/InAs field effect transistors.rnEfforts have been made to monolithically grow these devices onto larger and cheaper substrates like GaAs and Si, to improve the yield / decrease the cost of this technology and possibly integrate the devices with CMOS technology. We recently fabricated a 2.3 μm edge emitting laser grown by MBE on a Si substrate, and demonstrated room-temperature pulsed operation. Lasers emitting at this wavelength are of particular interest for gas sensing. Challenges to further improve the device include the substrate preparation, optimization of the nucleation layer quality, but also the conduction band engineering in order to facilitate the electronic transport at the Si/III-Sb interface.

机译：由GaSb，InAs，AlSb及其相关合金组成的材料系统对于设备设计者而言是一个令人印象深刻的工具箱，因为它们提供了很大的带隙和带偏移选择。近年来，分子束外延（MBE）和器件处理技术一直在迅速改善，从而允许制造高性能器件，例如量子级联激光器，中红外（MIR）边缘发射和表面发射激光器，超晶格红外光电探测器，但也非常高。速度/低功耗AlSb / InAs场效应晶体管。人们已努力将这些器件单片生长在更大，更便宜的GaAs和Si等衬底上，以提高产量/降低该技术的成本，并可能将这些器件与CMOS技术集成在一起。我们最近在MBE衬底上制造了由MBE生长的2.3μm边缘发射激光器，并演示了室温脉冲操作。在此波长下发射的激光对于气体感测特别重要。进一步改善器件的挑战包括衬底制备，成核层质量的优化以及导带工程，以促进在Si / III-Sb界面的电子传输。

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来源
《Novel in-plane semiconductor lasers IX》|2010年|P.76160V.1-76160V.9|共9页
会议地点 San Francisco CA(US)
作者
J.B. Rodriguez; L. Cerutti; P. Grech; G. Boissier; G. Narcy; E. Tournie;
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Universite Montpellier 2, Institut d'Electronique du Sud - UMR 5214 CNRS, Place Eugene Bataillon, 34095 Montpellier Cedex 5, France;

rnUniversite Montpellier 2, Institut d'Electronique du Sud - UMR 5214 CNRS, Place Eugene Bataillon, 34095 Montpellier Cedex 5, France;

rnUniversite Montpellier 2, Institut d'Electronique du Sud - UMR 5214 CNRS, Place Eugene Bataillon, 34095 Montpellier Cedex 5, France;

rnUniversite Montpellier 2, Institut d'Electronique du Sud - UMR 5214 CNRS, Place Eugene Bataillon, 34095 Montpellier Cedex 5, France;

rnUniversite Montpellier 2, Institut d'Electronique du Sud - UMR 5214 CNRS, Place Eugene Bataillon, 34095 Montpellier Cedex 5, France;

rnUniversite Montpellier 2, Institut d'Electronique du Sud - UMR 5214 CNRS, Place Eugene Bataillon, 34095 Montpellier Cedex 5, Franc;

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正文语种 eng
中图分类激光技术、微波激射技术;
关键词
laser diode; mid-infrared emission; molecular beam epitaxy; integration on silicon substrate;

机译：激光二极管中红外发射；分子束外延集成在硅基板上;

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专利

1. Yellow emission (573.5 nm) Ga/sub 0.65/In/sub 0.35/P lasers grown on GaAs/sub 0.6/P/sub 0.4/ substrates by gas source molecular beam epitaxy [J] . Chen A.C., Moy A.M. Electronics Letters . 1994,第24期

机译：通过气体源分子束外延在GaAs / sub 0.6 / P / sub 0.4 /衬底上生长的黄色发射（573.5 nm）Ga / sub 0.65 / In / sub 0.35 / P激光器
2. Self-catalyzed GaAsP nanowires grown on silicon substrates by solid-source molecular beam epitaxy [J] . Zhang Y., Aagesen M., Holm J.V., Nano letters . 2013,第8期

机译：固体源分子束外延在硅衬底上生长的自催化GaAsP纳米线
3. Influence of the Silicon Substrate on Defect Formation in MCT Grown on II-VI Buffered Si Using a Combined Molecular Beam Epitaxy/Metal Organic Vapor Phase Epitaxy Technique [J] . JANET E.HAILS, ANDREW M.KEIR, ANDREW GRAHAM Journal of Electronic Materials . 2007,第8期

机译：结合分子束外延/金属有机气相外延技术，硅衬底对II-VI缓冲Si上生长的MCT中缺陷形成的影响
4. Sb-based laser sources grown by molecular beam epitaxy on silicon substrates [C] . J.B. Rodriguez, L. Cerutti, P. Grech, SPIE Conference on Novel In-Plane Semiconductor Lasers . 2010

机译：基于SB的激光源通过硅基板上的分子束外延生长
5. Gallium arsenide/aluminum(x)-gallium(1-x)arsenide quantum well lasers grown on gallium arsenide and silicon by molecular beam epitaxy. [D] . Chen, Howard ZeHua. 1990

机译：砷化镓/铝（x）-砷化镓（1-x）量子阱激光器通过分子束外延生长在砷化镓和硅上。
6. Molecular beam epitaxy and properties of GaAsBi/GaAs quantum wells grown by molecular beam epitaxy: effect of thermal annealing [O] . Hajer Makhloufi, Poonyasiri Boonpeng, Simone Mazzucato, 2014

机译：分子束外延生长的分子束外延和GaAsBi / GaAs量子阱的性质：热退火的影响
7. Dissociation of Al2O3(0001) Substrates and the Roles of Silicon and Oxygen in N-Type Gan Thin Solid Films Grown by Gas-Source Molecular Beam Epitaxy [O] . Van Nostrand, J., Solomon, J., Saxler, A., 2012

机译：Al2O3（0001）衬底的解离以及硅和氧在气源分子束外延生长的N型Gan薄膜中的作用
8. Much Improved Self-Organized In(0.53)Ga(0.47)As Quantum Wire Lasers Grown on (775)B InP Substrates by Molecular Beam Epitaxy [R] . Ohmori, K. , Hino, H. , Fujita, T. , 2006

机译：通过分子束外延在（775）B Inp衬底上生长的大量改进的自组织In（0.53）Ga（0.47）as量子线激光器

Sb-based laser sources grown by molecular beam epitaxy on silicon substrates

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