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Type-Ⅰ QW cascade diode lasers with 960 mW of CW power at 3 μm

机译:Ⅰ型QW级联二极管激光器,其CW功率为3μm,功率为960 mW

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Cascade pumping schemes that utilize single-QW gain stages enhanced both the power conversion efficiency and the output power level of GaSb-based diode lasers that emit near and above 3 μm at room temperature. The cascade lasers discussed in this work had densely stacked type-Ⅰ QWs gain stages characterized by high differential gain. The 3 μm emitting devices demonstrated CW threshold current densities near 100 A/cm~2, a twofold improvement over the previous world record, that resulted in peak power conversion efficiencies increasing to 16% at 17℃. Comparable narrow ridge two-stage devices generated more than 100 mW of CW power with ~10% power conversion efficiencies. Three-stage multimode cascade lasers emitted 960 mW of CW output power near 3 μm and 120 mW CW near 3.3 μm.
机译:利用单QW增益级联的级联泵浦方案既提高了功率转换效率,又提高了基于GaSb的二极管激光器的输出功率水平,该激光器在室温下发射近3μm或更高。本文讨论的级联激光器具有密集堆叠的Ⅰ型QWs增益级,其特征是高差分增益。 3μm发射器件的CW阈值电流密度接近100 A / cm〜2,比以前的世界纪录提高了两倍,导致峰值功率转换效率在17℃时提高到16%。可比的窄脊两级器件产生的CW功率超过100 mW,功率转换效率约为10%。三级多模级联激光器在3μm附近发出960 mW的CW输出功率,在3.3μm附近发出120 mW的CW。

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