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975 nm high-peak power ns-diode laser based MOPA system suitable for water vapor DIAL applications

机译:基于975 nm高峰值功率ns二极管激光器的MOPA系统,适用于水蒸气DIAL应用

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摘要

Micro-DIAL (differential absorption LIDAR) systems require light sources with peak powers in the range of several 10 W together with a spectral line width smaller than the width of absorption lines under study. For water vapor at atmospheric pressure this width should be smaller than 10 pm at 975 nm. In this paper, an all semiconductor master oscillator power amplifier system at an emission wavelength of 975 nm will be presented. This spectral range was selected with respect to a targeted absorption path length of 5000 m and H_2O line strengths. A distributed feedback (DFB) ridge waveguide diode laser operated in continuous wave is used as master oscillator whereas a tapered amplifier consisting of a RW section and a flared section is implemented as power amplifier. The RW section acts as optical gate. The current pulses injected into the RW part have a length of 8 ns and the tapered part is driven with 15 ns long pulses. The delay between the pulses is adjusted for optimal pulse shape. The repetition rate is in both cases 25 kHz. A maximal pulse output power of about 16 W limited by the available current supply is achieved. The spectral line width of the system determined by the properties of the DFB laser is smaller than 10 pm. The tuning range amounts 0.9 nm and a SMSR of 40 dB is observed. From the dependence of the peak power on the power injected into the tapered amplifier, the saturation power is determined to 5.3 mW.
机译:微型DIAL(差分吸收LIDAR)系统要求光源的峰值功率在几10 W的范围内,并且谱线宽度小于所研究的吸收线的宽度。对于大气压下的水蒸气,该宽度在975 nm处应小于10 pm。在本文中,将介绍发射波长为975 nm的全半导体主振荡器功率放大器系统。相对于目标吸收路径长度5000 m和H_2O线强度选择此光谱范围。以连续波工作的分布式反馈(DFB)脊形波导二极管激光器用作主振荡器,而由RW部分和喇叭形部分组成的锥形放大器用作功率放大器。 RW部分用作光闸。注入RW部分的电流脉冲的长度为8 ns,而锥形部分则以15 ns长的脉冲驱动。调整脉冲之间的延迟以获得最佳脉冲形状。在两种情况下,重复率均为25 kHz。实现了由可用电流限制的约16 W的最大脉冲输出功率。由DFB激光器的特性确定的系统光谱线宽度小于10 pm。调谐范围为0.9 nm,观察到的SMSR为40 dB。根据峰值功率对注入锥形放大器的功率的依赖性,可以将饱和功率确定为5.3 mW。

著录项

  • 来源
    《Novel in-plane semiconductor lasers XIV》|2015年|93821K.1-93821K.8|共8页
  • 会议地点 San Francisco CA(US)
  • 作者单位

    Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik, D-12489 Berlin, Germany;

    Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik, D-12489 Berlin, Germany;

    Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik, D-12489 Berlin, Germany,Institute of Materials Science, Vietnam Academy of Science and Technology, 18 Hoang Quoc Viet rd., Cau Giay, Hanoi, Vietnam;

    Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik, D-12489 Berlin, Germany;

    Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik, D-12489 Berlin, Germany;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    MOPA systems; Raman spectroscopy; SERDS;

    机译:MOPA系统;拉曼光谱SERDS;

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