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Study of Structural Defects in CdZnTe Crystals by High Resolution Electron Microscopy

机译:高分辨率电子显微镜研究CdZnTe晶体的结构缺陷

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摘要

We investigated defects in CdZnTe crystals produced from various conditions and their impact on fabricated devices. In this study, we employed transmission and scanning transmission electron microscope (TEM and STEM), because defects at the nano-scale are not observed readily under an optical or infrared microscope, or by most other techniques. Our approach revealed several types of defects in the crystals, such as low-angle boundaries, dislocations and precipitates, which likely are major causes in degrading the electrical properties of CdZnTe devices, and eventually limiting their performance.
机译:我们研究了各种条件下产生的CdZnTe晶体中的缺陷及其对制造器件的影响。在这项研究中,我们采用了透射和扫描透射电子显微镜(TEM和STEM),因为在光学或红外显微镜或大多数其他技术下不容易观察到纳米级的缺陷。我们的方法揭示了晶体中几种类型的缺陷,例如低角度边界,位错和沉淀,这可能是导致CdZnTe器件电性能下降并最终限制其性能的主要原因。

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  • 来源
  • 会议地点 San Francisco CA(US);San Francisco CA(US)
  • 作者单位

    Brookhaven National Laboratory, Upton, NY 11973, USA;

    Brookhaven National Laboratory, Upton, NY 11973, USA;

    Brookhaven National Laboratory, Upton, NY 11973, USA;

    Brookhaven National Laboratory, Upton, NY 11973, USA;

    Brookhaven National Laboratory, Upton, NY 11973, USA;

    Brookhaven National Laboratory, Upton, NY 11973, USA;

    Brookhaven National Laboratory, Upton, NY 11973, USA;

    Brookhaven National Laboratory, Upton, NY 11973, USA;

    Brookhaven National Laboratory, Upton, NY 11973, USA;

    Brookhaven National Laboratory, Upton, NY 11973, USA;

    Brookhaven National Laboratory, Upton, NY 11973, USA;

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  • 正文语种 eng
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