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Quantum dots-in-a-well infrared photodetectors for long wavelength infrared detection

机译:量子阱点红外光电探测器,用于长波长红外探测

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We report on a quantum dots-in-a-well infrared photodetector (DWELL QDIP) grown by metal organic vapor phase epitaxy. The DWELL QDIP consisted of ten stacked InAs/In_(0.15)Ga_(0.85)As/GaAs QD layers embedded between n-doped contact layers. The density of the QDs was about 9 x 10~(10) cm~(-2) per QD layer. The energy level structure of the DWELL was revealed by optical measurements of interband transitions, and from a comparison with this energy level scheme the origin of the photocurrent peaks could be identified. The main intersubband transition contributing to the photocurrent was associated with the quantum dot ground state to the quantum well excited state transition. The performance of the DWELL QDIPs was evaluated regarding responsivity and dark current for temperatures between 15 K and 77 K. The photocurrent spectrum was dominated by a LWIR peak, with a peak wavelength at 8.4 μm and a full width at half maximum (FWHM) of 1.1 μm. At an operating temperature of 65 K, the peak responsivity was 30 mA/W at an applied bias of 4 V and the dark current was 1.2x10~(-5) A/cm~2. Wavelength tuning from 8.4 μm to 9.5 μm was demonstrated, by reversing the bias of the detector.
机译:我们报告了由金属有机气相外延生长的量子阱红外光探测器(DWELL QDIP)。 DWELL QDIP由嵌入n掺杂接触层之间的十个堆叠的InAs / In_(0.15)Ga_(0.85)As / GaAs QD层组成。每个QD层的QD密度约为9 x 10〜(10)cm〜(-2)。 DWELL的能级结构是通过带间跃迁的光学测量揭示的,并且通过与该能级方案的比较可以确定光电流峰值的起源。贡献光电流的主要子带间跃迁与量子点基态到量子阱激发态跃迁有关。评估了DWELL QDIP在15 K和77 K之间温度下的响应度和暗电流性能。光电流光谱以LWIR峰为主,峰值波长为8.4μm,半峰全宽(FWHM)为1.1微米在65 K的工作温度下,施加4 V偏压时的峰值响应度为30 mA / W,暗电流为1.2x10〜(-5)A / cm〜2。通过反转检测器的偏压,证明了从8.4μm到9.5μm的波长调谐。

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