FLOAT ZONE SILICON FOR INFRARED AND MICROWAVE APPLICATIONS

机译：用于红外和微波应用的浮区硅

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High Resistivity (HiRes~(TM)) silicon (ρ ≥ 8000 Ωcm) is demonstrated as the best choice of microwave substrate for emerging radio frequency (RF) MEMS devices operating at GHz/THz frequencies. The potential combination of active devices with passive MEMS structures allows single-chip realization of complete and cost effective microwave and millimeter wave systems. High Transparency (HiTran) silicon is demonstrated as the best choice of infrared material for systems working in the 3-5 μm region and for some type of systems working in the 8-12 μm region provided than thickness of the HiTran material does not exceed 2 mm.

机译：对于在GHz / THz频率下运行的新兴射频（RF）MEMS器件，高电阻率（HiResTM）硅（ρ≥8000Ωcm）被证明是微波基板的最佳选择。有源器件与无源MEMS结构的潜在组合允许单芯片实现完整且经济高效的微波和毫米波系统。对于在3-5μm范围内工作的系统以及在8-12μm范围内工作的某些类型的系统，高透明（HiTran）硅被证明是红外材料的最佳选择，前提是HiTran材料的厚度不超过2毫米

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来源
《Optical Materials in Defence Systems Technology》|2004年|P.66-76|共11页
会议地点 London(GB)
作者
Thomas Clausen;
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作者单位

Topsil Semiconductor Materials A/S, Linderupvej 4, DK-3660 Frederikssund, Denmark;

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会议组织
原文格式 PDF
正文语种 eng
中图分类 TB342;
关键词
microwave communication; infrared optics; float zone silicon; high resistivity silicon; high transparency silicon;

机译：微波通信;红外光学;浮区硅;高电阻硅;高透明硅;

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1. Radiation hardness of Czochralski silicon, Float Zone silicon and oxygenated Float Zone silicon studied by low energy protons [J] . J. Haerkoenen, E. Tuovinen, P. Luukka, Nuclear Instruments & Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment . 2004,第1a2期

机译：低能质子研究直拉硅，浮区硅和含氧浮区硅的辐射硬度
2. Gettering in high resistive float zone silicon wafers for silicon detector applications [J] . Li Z., Kranar H.W. IEEE Transactions on Nuclear Science . 1989,第1期

机译：用于硅检测器应用的高阻浮区硅晶片中的吸气
3. Measurements of Permittivity, Dielectric Loss Tangent, and Resistivity of Float-Zone Silicon at Microwave Frequencies [J] . Krupka J., Breeze J., Centeno A., IEEE Transactions on Microwave Theory and Techniques . 2006,第期

机译：微波频率下浮区硅的介电常数，介电损耗角正切和电阻率的测量
4. FLOAT ZONE SILICON FOR INFRARED AND MICROWAVE APPLICATIONS [C] . Thomas Clausen Conference on Optical Materials in Defence Systems Technology . 2004

机译：用于红外和微波应用的浮子区硅
5. Silicon-based passives for integrated microwave and infrared applications. [D] . Sun, Zhuowen. 2006

机译：用于集成微波和红外应用的硅基无源器件。
6. A New Water Level Measurement Method Combining Infrared Sensors and Floats for Applications on Laboratory Scale Channel under Unsteady Flow Regime [O] . Samer Majdalani, Jean-Philippe Chazarin, Roger Moussa 2019

机译：非定常流态下在实验室规模通道上结合红外传感器和浮子的水位测量新方法
7. Measurements of permittivity, dieletric loss tangent, and resistivity of float-zone silicon at microwave frequencies [O] . Krupka J, Breeze J, Centeno A, 2006

机译：微波频率下浮区硅的介电常数，介电损耗角正切和电阻率的测量

FLOAT ZONE SILICON FOR INFRARED AND MICROWAVE APPLICATIONS

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