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Introducing a Novel Flow to Estimate Challenges Encountered While Transitioning from RET Development to Manufacturable Solution

机译:引入一种新颖的流程来估算从RET开发向可制造解决方案过渡时遇到的挑战

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Source Mask Optimization (SMO) has become an integral part of resolution enhancement techniques (RET) for almost all critical layers at advanced technology nodes. Over the past couple of years, various flows have emerged for integrating SMO into mainstream RET selection. These flows revolve mainly around clip selection, resist model, verification and analysis metrics, design rule optimization, and so on. There has also been strong emphasis on the quality of mask that is conjugated for source selection process. All these variations in analysis and rigorous simulations for flow selection are critical but they also create a bottleneck in overall RET development. In this paper, we demonstrate an initial RET development flow for 20 nm technology with emphasis on quantifying benefits coming from source and mask. We also report challenges that are encountered in the foundry environment when moving from RET development to production. In conclusion, we demonstrate a reliable solution that could be integrated early in RET development and easily adapted for a production environment.
机译:源掩模优化(SMO)已成为高级技术节点上几乎所有关键层的分辨率增强技术(RET)不可或缺的一部分。在过去的几年中,涌现了各种将SMO集成到主流RET选择中的流程。这些流程主要围绕剪辑选择,抵抗模型,验证和分析指标,设计规则优化等方面。还强烈强调了用于源选择过程的共轭掩模的质量。对于流量选择的分析和严格模拟中的所有这些变化都是至关重要的,但它们也构成了整个RET开发的瓶颈。在本文中,我们演示了针对20 nm技术的初始RET开发流程,重点在于量化源和掩模带来的好处。我们还报告了从RET开发转向生产时在铸造环境中遇到的挑战。总而言之,我们展示了一种可靠的解决方案,该解决方案可以在RET开发的早期集成并且可以轻松地适应生产环境。

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