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Grayscale Lithography - 3D Structuring and Thickness Control

机译：灰度光刻-3D结构和厚度控制

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Grayscale lithography has become a common technique for three dimensional structuring of substrates. In order to make he process useful for manufacturing of semiconductor and in particular optoelectronic devices, high reproducible and uniform final film thicknesses are required. Simulations based on a calibrated resist model are used to predict customized process parameters from pixel layout to 3d substrate patterning. Multiple, arbitrary resist heights are reached by using i-line lithography. Scalable and uniform transfer of discrete step heights into oxide are realized by multiple alternating high selective resist and oxide (MASO) etch. Requirements and limitations of reliable 3D film thickness and uniformity control within a CMOS fabrication environment are being discussed.

机译：灰度光刻已经成为用于基板的三维结构的常用技术。为了使该方法可用于制造半导体，特别是光电子器件，需要高可再现性和均匀的最终膜厚度。基于校准后的抗蚀剂模型的仿真可用于预测从像素布局到3d基板构图的自定义工艺参数。通过使用i线光刻技术，可以达到多个任意的抗蚀剂高度。通过多次交替的高选择性抗蚀剂和氧化物（MASO）蚀刻，可实现将离散的台阶高度可缩放且均匀地转移到氧化物中。讨论了在CMOS制造环境中可靠3D膜厚度和均匀性控制的要求和局限性。

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来源
《Optical microlithography XXVI》|2013年|868310.1-868310.12|共12页
会议地点 San Jose CA(US)
作者
Marcel Heller; Dieter Kaiser; Maik Stegemann; Georg Holfeld; Nicolo Morgana; Jens Schneider; Daniel Sarlette;
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作者单位

Infineon Technologies Dresden GmbH, Konigsbriicker Str. 180, 01099 Dresden, Germany;

Infineon Technologies Dresden GmbH, Konigsbriicker Str. 180, 01099 Dresden, Germany;

Infineon Technologies Dresden GmbH, Konigsbriicker Str. 180, 01099 Dresden, Germany;

Infineon Technologies Dresden GmbH, Konigsbriicker Str. 180, 01099 Dresden, Germany;

Infineon Technologies Dresden GmbH, Konigsbriicker Str. 180, 01099 Dresden, Germany;

Infineon Technologies Dresden GmbH, Konigsbriicker Str. 180, 01099 Dresden, Germany;

Infineon Technologies Dresden GmbH, Konigsbriicker Str. 180, 01099 Dresden, Germany;

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原文格式 PDF
正文语种 eng
中图分类
关键词
grayscale lithography; 3D pattern transfer; film thickness uniformity;

机译：灰度光刻3D图案传输；膜厚均匀性;

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专利

1. Controlling resist thickness and etch depth for fabrication of 3D structures in electron-beam grayscale lithography [J] . J. Kim, D.C. Joy, S.-Y. Lee Microelectronic Engineering . 2007,第12期

机译：控制电子束灰度光刻中3D结构制造的抗蚀剂厚度和蚀刻深度
2. Grayscale e-beam lithography: Effects of a delayed development for well- controlled 3D patterning [J] . Mortelmans Thomas, Kazazis Dimitrios, Guzenko Vitaliy A., Microelectronic Engineering . 2020,第Mara期

机译：灰度电子梁光刻：延迟开发对井控制3D图案的影响
3. 3D structures for UV-NIL template fabrication with grayscale e-beam lithography [J] . Guido Piaszenski, Ulrich Barth, Axel Rudzinski, Microelectronic Engineering . 2007,第5a8期

机译：用于具有灰度电子束光刻技术的UV-NIL模板制造的3D结构
4. Grayscale Lithography - 3D Structuring and Thickness Control [C] . Marcel Heller, Dieter Kaiser, Maik Stegemann, Conference on optical microlithography XXVI . 2013

机译：灰度光刻 - 3D结构和厚度控制
5. Adjoint based, Error Controlled, Loosely Coupled, Unstructured Design Optimization and Adaptive Mesh Refinement Using FUN3D [D] . Lake, Troy E. 2017

机译：基于伴随的，错误控制，松耦合，非结构化设计优化和使用FUN3D的自适应网格细化
6. 3D Stretchable Arch Ribbon Array Fabricated via Grayscale Lithography [O] . Yu Pang, Yi Shu, Mohammad Shavezipur, -1

机译：通过灰度光刻制作的3D可拉伸拱形丝带阵列
7. Optimization methods for 3D lithography process utilizing DMD-based maskless grayscale photolithography system [O] . Ma, X, Kato, Y, Hirai, Y, 2015

机译：基于DMD的无掩模灰度光刻系统的3D光刻工艺优化方法

Grayscale Lithography - 3D Structuring and Thickness Control

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