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Trapping with local evanescent light fields

机译：陷入局部light逝光场

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Following the recent advances in nano-optics, optical manipulation by evanescent fields instead of conventional propagating fields has recently awaken an increasing interest. The main advantages of using low dimensionality fields are (ⅰ) the possibility of integrating on a chip applications involving optical forces but also (ⅱ) the absence of limitation by the diffraction limit for the trapping volume. Previous works have investigated theoretically and experimentally the guiding of dielectric and metallic beads at an interface sustaining an extended surface wave. In this work, we study theoretically the radiation forces exerted on Rayleigh dielectric beads under local evanescent illumination. Especially, we consider the configuration where a three-dimensional Gaussian beam is totally reflected at the interface of a glass prism. The results point out the illumination parameters where the gradient forces exceed the scattering force and allow for a stable trapping. The effect of the Goos-Haenchen shift on the location of the trapping site is also discussed.
机译：随着纳米光学的最新进展，通过by逝场而不是传统的传播场进行光学操纵最近引起了越来越多的兴趣。使用低维场的主要优点是（ⅰ）可以将涉及光学力的芯片集成到芯片中，而且（ⅱ）不受捕获体积衍射极限的限制。先前的工作在理论上和实验上研究了介电和金属珠在维持扩展表面波的界面处的导引。在这项工作中，我们在理论上研究了局部e逝照明下施加在瑞利电介质珠上的辐射力。尤其是，我们考虑在玻璃棱镜的界面处完全反射三维高斯光束的配置。结果指出了照明参数，其中梯度力超过散射力并允许稳定的陷印。还讨论了Goos-Haenchen位移对诱捕位点位置的影响。

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