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Hybrid Silicon Lasers

机译:混合硅激光器

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摘要

Hybrid silicon lasers based on bonded III-V layers on silicon are discussed with respect to the challenges and trade-offs in their design and fabrication. Focus is on specific designs that combine good light confinement in the gain layer with good spectral control provided by grating structures patterned in silicon.
机译:讨论了基于硅上键合III-V层的混合硅激光器,并对其设计和制造中的挑战和折衷进行了讨论。重点是将增益层中的良好光限制与硅图案化的光栅结构提供的良好光谱控制相结合的特定设计。

著录项

  • 来源
    《Optoelectronic integrated circuits XIII》|2011年|p.79420D.1-79420D.9|共9页
  • 会议地点 San Francisco CA(US)
  • 作者单位

    Department of Information Technology, Photonics Research Group, Ghent University - IMEC Sint-Pietersnieuwstraat 41 B-9000 Ghent, Belgium;

    Department of Information Technology, Photonics Research Group, Ghent University - IMEC Sint-Pietersnieuwstraat 41 B-9000 Ghent, Belgium;

    Department of Information Technology, Photonics Research Group, Ghent University - IMEC Sint-Pietersnieuwstraat 41 B-9000 Ghent, Belgium;

    Department of Information Technology, Photonics Research Group, Ghent University - IMEC Sint-Pietersnieuwstraat 41 B-9000 Ghent, Belgium;

    Department of Information Technology, Photonics Research Group, Ghent University - IMEC Sint-Pietersnieuwstraat 41 B-9000 Ghent, Belgium;

    Alcatel-Thales III-V labs, Campus Poly technique, 1, Avenue A. Fresnel, 91767 Palaiseau cedex, France;

    Alcatel-Thales III-V labs, Campus Poly technique, 1, Avenue A. Fresnel, 91767 Palaiseau cedex, France;

    Department of Information Technology, Photonics Research Group, Ghent University - IMEC Sint-Pietersnieuwstraat 41 B-9000 Ghent, Belgium;

    Department of Information Technology, Photonics Research Group, Ghent University - IMEC Sint-Pietersnieuwstraat 41 B-9000 Ghent, Belgium;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 光学集成电路(集成光路);
  • 关键词

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