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One-step fabrication of high performance organic field-effect transistors from semiconductor/dielectric blends

机译:由半导体/介电混合物一步制造高性能有机场效应晶体管

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Vertical phase separation of organic semiconductor/dielectric polymer blends has been used in field-effect transistors (FETs) to fabricate low-voltage devices, improve environmental stability, and reduce semiconductor cost. However, all structures reported in previous studies are dielectric-up and semiconductor-bottom structures, and it is difficult to combine multi-advantages in one system because special materials and methods are used in each case. Here, we first fabricated a semiconductor-top and dielectric-bottom bilayer structure by surface-induced vertical phase separation of conjugated molecules and insulating polymer blends. The use of these bilayered blends as active layer in FETs leads to an improvement of the device performance with a drastic reduction of semiconductor content because insulating polymer layer can act as modifier at the semiconductor/dielectric interface. Moreover, because the insulting polymer layer can be used as dielectric layer without any other dielectrics, the blended films can be used to fabricate high-performance, low-semiconductor-content, and low-voltage FETs in a one-step process.
机译:有机半导体/介电聚合物共混物的垂直相分离已用于场效应晶体管(FET)中,以制造低压设备,改善环境稳定性并降低半导体成本。但是,先前研究中报道的所有结构都是介电层结构和半导体底部结构,由于在每种情况下都使用特殊的材料和方法,因此很难在一个系统中组合多种优点。在这里,我们首先通过表面诱导的共轭分子和绝缘聚合物共混物的垂直相分离来制造半导体顶部和介电层底部的双层结构。将这些双层共混物用作FET中的有源层,可改善器件性能,同时大幅减少半导体含量,因为绝缘聚合物层可在半导体/电介质界面上充当改性剂。此外,因为可以将绝缘聚合物层用作没有任何其他电介质的电介质层,所以可以在一步过程中将共混膜用于制造高性能,低半导体含量和低压FET。

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