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Band Bending and Debye Screening in F_(16)CuPc/BP2T Ambipolar Organic Thin Film Transistor

机译:F_(16)CuPc / BP2T双极有机薄膜晶体管的带弯曲和德拜屏蔽

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There has been a considerable interest on forming ambipolar organic thin film transistors (OTFTs) because such devices are advantageous for integrated circuits, such as lower power consumption, design and fabrication simplification, and better immunity. Most recently, Shi et al. observed a substantial mobility improvement in ambipolar OTFTs based on the heterojunction formed between copper-hexadecafluoro-phthalocyanine (F_(16)CuPc) and 2,5-bis(4-biphenylyl) bithiophene (BP2T). Specifically, the hole and electron mobility are improved by 3 and 12 folds from the bulk values, respectively. We examined the interface formation between F_(16)CuPc and BP2T using ultraviolet photoemission (UPS) and inverse photoemission spectroscopy (IPES). It is observed that in F_(16)CuPc/BP2T the heterojunction is characterized by band bending in both materials, while in BP2T/F_(16)CuPc the band bending is confined in BP2T only. For F_(16)CuPc/BP2T, the band bending of BP2T and F_(16)CuPc are 0.40 and 0.35 eV, respectively. The band bending region is ~ 15 nm in both materials, from which the Debye lengths of the materials can be deduced. The combination of the band bending and finite Debye lengths offers an explanation to the observed improvement and thickness dependence of the mobility in OTFTs based on such heterojunctions.
机译:形成双极性有机薄膜晶体管(OTFT)引起了人们极大的兴趣,因为这种器件对于集成电路是有利的,例如较低的功耗,简化的设计和制造以及更好的抗扰性。最近,Shi等人。观察到基于铜-十六氟-酞菁铜(F_(16)CuPc)和2,5-双(4-联苯基)联噻吩(BP2T)之间形成的异质结,双极性OTFT的迁移率显着提高。具体地说,空穴和电子迁移率分别比体积值提高了3倍和12倍。我们使用紫外光发射(UPS)和反光发射光谱(IPES)检查了F_(16)CuPc和BP2T之间的界面形成。可以看出,在F_(16)CuPc / BP2T中,异质结的特征在于两种材料的能带弯曲,而在BP2T / F_(16)CuPc中,能带弯曲仅限于BP2T。对于F_(16)CuPc / BP2T,BP2T和F_(16)CuPc的能带弯曲分别为0.40和0.35 eV。两种材料的带弯曲区域均为〜15 nm,从中可以得出材料的德拜长度。带弯曲和有限的德拜长度的组合为基于这种异质结的OTFT中迁移率的改善和厚度依赖性提供了解释。

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