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首页> 外文会议>Organic, Hybrid, and Perovskite Photovoltaics XVIII >Ultrashort pulsed laser-dicing of silicon wafers for the decollating of conventional and hybrid solar cells
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Ultrashort pulsed laser-dicing of silicon wafers for the decollating of conventional and hybrid solar cells

机译：硅片的超短脉冲激光切割，用于常规和混合太阳能电池的脱散

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摘要

In order to cut and decollate silicon for the manufacturing of solar cells and electronic components, commonly blade sawing or nanosecond-based laser processes are used. If the cut needs to be carried out with a high precision and without causing any thermal damage to the surrounding material, ultrashort pulsed laser cutting can be used to deliver a fine and small cutting kerf. The reduction of the kerf width leads to a higher yield per wafer, if single elements need to be cut out. As a result, marginal heat affected zones with minimal edge damages are attainable. Ultrashort pulsed lasers range from pico- to femtoseconds. In order to demonstrate the best pulse duration and ablation strategy for the singling of silicon wafers, the ablation threshold for pulse durations is determined using the Liu's method. Through this method, the diameter of the ablated geometry is measured, squared and plotted against the peak fluence on a logarithmic scale. With the knowledge of the ablation threshold, various influences on cutting of silicon are compared in order to create a minimal cutting kerf with reduced heat affected zone. With decreasing pulse duration, the surface of the silicon seems to be smoother and ablation is characterized by a sharp ridge. The ablation threshold of silicon depends on the temperature, so a second laser beam for pre-heating of the silicon material is coupled coaxially with the cutting beam. This arrangement is found to improve the ablation behavior of silicon.
机译：为了切割和整理硅以制造太阳能电池和电子元件，通常使用刀片锯或基于纳秒的激光工艺。如果需要高精度地进行切割，并且不会对周围材料造成任何热损伤，则可以使用超短脉冲激光切割来提供细小的切缝。如果需要切割单个元件，则切口宽度的减小导致每个晶片的产量更高。结果，可获得具有最小边缘损坏的边际热影响区域。超短脉冲激光的范围从皮秒到飞秒。为了展示用于单片硅片的最佳脉冲持续时间和烧蚀策略，使用Liu's方法确定脉冲持续时间的烧蚀阈值。通过这种方法，测量烧蚀的几何形状的直径，将其平方，并以对数刻度相对于峰值通量绘制。在了解了烧蚀阈值的情况下，比较了对硅切割的各种影响，以创建具有减小的热影响区的最小切割缝。随着脉冲持续时间的减小，硅的表面似乎更光滑，并且烧蚀的特征在于尖锐的脊。硅的烧蚀阈值取决于温度，因此用于预热硅材料的第二激光束与切割束同轴耦合。发现这种布置改善了硅的烧蚀行为。

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