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首页> 外文会议>Photomask and Next-Generation Lithography Mask Technology XIV pt.2; Proceedings of SPIE-The International Society for Optical Engineering; vol.6607 pt.2 >Threshold Residual Ion Concentration on Photomask Surface to Prevent Haze Defects
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Threshold Residual Ion Concentration on Photomask Surface to Prevent Haze Defects

机译：在光掩模表面上的阈值残留离子浓度可防止雾霾缺陷

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摘要

Haze generation has been serious issue on wafer lithography process, as illumination wavelength become shorter with 248nm and 193nm. Several published papers have been reported that ammonium and sulfate residual ion on mask surface is major source of haze generation. These ions are come from conventional photomask cleaning process. PKL have been studied new cleaning process to minimize haze generation and found cleaning process condition. Also, PKL found that residual ammonium ion is major source of haze generation than residual sulfate ion. New cleaning process improved residual ammonium ion concentration to less than 45 ppb from 900 ppb with conventional RCA cleaning. And illumination doses generating haze have been tested on five residual ammonium ion, 1500 ppb, 900 ppb, 160 ppb, 70 ppb, 45 ppb, respectively. In house designed Haze Acceleration Test Bench (HATB) was used to expose masks. Haze were not generated until from 25 kJ to 100 kJ, on 160 ppb to 45 ppb of ammonium ion concentration, respectively. And the residual of sulfate ion and its haze generation dose did not correspond. Residual ammonium ions need to be controlled tightly than sulfate ion. PKL concentrated on minimizing ammonium residual with new cleaning process and found the optimized cleaning process for preventing 100kJ of cumulative energy on ArF embedded attenuated PSM (EAPSM).
机译：随着照射波长变得更短（248nm和193nm），雾度的产生一直是晶圆光刻工艺中的严重问题。已有几篇已发表的论文报道，面罩表面的铵和硫酸根残留离子是产生雾霾的主要来源。这些离子来自常规的光掩模清洁工艺。已经研究了PKL的新清洁工艺，以最大程度地减少雾霾的产生，并找到了清洁工艺条件。另外，PKL还发现，残留的铵离子比残留的硫酸根离子是雾霾产生的主要来源。新的清洗工艺将残留的铵离子浓度从常规RCA清洗的900 ppb降低到了45 ppb以下。分别在1500 ppb，900 ppb，160 ppb，70 ppb，45 ppb的五个残留铵离子上测试了产生雾度的照明剂量。室内设计的霾加速试验台（HATB）用于暴露口罩。直到从25 kJ到100 kJ，在160 ppb到45 ppb的铵离子浓度下才产生雾度。并且硫酸根离子的残留及其雾度的产生剂量不对应。残留的铵离子需要比硫酸根离子严格控制。 PKL致力于通过新的清洁工艺来最大程度地减少铵残留物，并发现了优化的清洁工艺，可防止ArF嵌入式衰减PSM（EAPSM）上累积能量为100kJ。

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