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Analysis of quantum-wire MODFETs employing coupled well channels

机译：使用耦合阱通道的量子线MODFET分析

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Abstract: A novel coupled well structure for implementing a quantum wire MODFET is proposed and analyzed. A thin barrier layer is placed adjacent to the standard modulation doped heterointerface, resulting in a coupled quantum well region. Varying the distance between the barrier and the interface provides a means of controlling the location and distribution of the two-dimensional electron gas. Further confinement of the carriers to one-dimension is obtained by methods known in the literature, such as mesa etching and regrowth. It has been found that the peak of the electron distribution for the first confined state, as measured from the modulation doped interface, changes dramatically depending on the location of the thin barrier. The peak can be shifted as much as 45 Angstrom for a change in the barrier location of only 20 Angstrom. Implications of this are included in the charge control model, from which the current-voltage (I$-d$/V$-d$/, I$-d$/-V$-g$/) and transconductance (g$-m$/-V$-g$/) characteristics are obtained. Additionally, the frequency responses (f$-T$/-V$-g$/) of several variations of this device are presented. !19
机译：摘要：提出并分析了一种用于实现量子线MODFET的新型耦合阱结构。薄的势垒层与标准调制掺杂的异质界面相邻放置，从而产生耦合的量子阱区域。改变势垒和界面之间的距离提供了一种控制二维电子气的位置和分布的手段。通过文献中已知的方法，例如台面蚀刻和再生长，将载体进一步限制为一维。已经发现，如从调制掺杂界面测得的，第一限制状态的电子分布的峰值根据薄势垒的位置而急剧变化。可以将峰值移动多达45埃，以使势垒位置仅改变20埃。电荷控制模型中包含了这种影响，电流-电压（I $ -d $ / V $ -d $ /，I $ -d $ /-V $ -g $ /）和跨导（g $ -m $ /-V $ -g $ /）特性。此外，还介绍了此设备几种变体的频率响应（f $ -T $ /-V $ -g $ /）。 ！19

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