Metal resistor bolometer on GaAs substrate

机译：GaAs基板上的金属电阻测辐射热计

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A metal resistor bolometer for the detection of x-ray emission from laser plasma has been designed and fabricated. The bolometer is placed on a thin polymeric foil with the use of thin film technology. The foil is suspended on a GaAs substrate. The Au/Pt/Ti thin film resistor of 2000 Ω resistance and 0.19%/K temperature coefficient is used for sensing temperature. A detection head equipped with the bolometer and accompanying read-out electronics has been fabricated and used in a plasma experiment.

机译：已经设计并制造了用于检测激光等离子体的X射线发射的金属电阻测辐射热仪。利用薄膜技术将测辐射热计放置在薄聚合物箔上。箔片悬浮在GaAs衬底上。使用2000电阻和0.19％/ K温度系数的Au / Pt / Ti薄膜电阻器感测温度。装配了辐射热计和随附的读出电子设备的检测头已经制造出来，并用于等离子体实验。

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来源
《Photonics, Devices, and Systems III》|2005年|P.618005.1-618005.4|共4页
会议地点 Prague(CZ)
作者
P. Machac; L. Ryc;
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作者单位

Institute of Chemical Technology, Technicka 5, 166 28 Prague 6, Czech Republic;

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会议组织
原文格式 PDF
正文语种 eng
中图分类工程光学;
关键词
bolometer; GaAs; thin film resistor; polyimid; x-ray radiation;

机译：辐射热计;砷化镓;薄膜电阻器;聚酰亚胺; X射线辐射;

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专利

1. Radiation loss measurements in compact helical system by a metal resistor bolometer [J] . Sobhanian S., Iguchi H. Indian Journal of Pure & Applied Physics . 1998,第3期

机译：用金属电阻测辐射热计测量紧凑型螺旋系统中的辐射损耗
2. GaAs-based microelectromechanical terahertz bolometers fabricated on high-resistivity Si substrates using wafer bonding technique [J] . Tianye Niu, Natalia Morais, Boqi Qiu, Applied Physics Letters . 2021,第4期

机译：基于GAAS的微电机电太赫兹钻孔，使用晶片键合技术在高电阻率SI基板上制造
3. Metalorganic vapor phase epitaxy growth and properties of GaAs/AlGaAs and InGaAs/GaAs quantum well structures on (111) A GaAs substrates [J] . Soohaeng Cho, A. Sanz-Hervas, Jongseok Kim Microelectronics Journal . 1999,第4a5期

机译：（111）A GaAs衬底上金属有机气相外延生长及GaAs / AlGaAs和InGaAs / GaAs量子阱结构的性质
4. Metal resistor bolometer on GaAs substrate [C] . P. Mach, L. Ryc Conference on Photonics, Devices, and Systems . 2006

机译：GaAs衬底上的金属电阻器电阻器
5. InGaAs/InAlAs quantum wells for 1.3 micron electro-absorption modulators on GaAs substrates. [D] . Shen, Lei. 1997

机译：GaAs衬底上用于1.3微米电吸收调制器的InGaAs / InAlAs量子阱。
6. Degradation of GaAs/AlGaAs Quantized Hall Resistors With Alloyed AuGe/Ni Contacts [O] . Kevin C. Lee 1998

机译：具有合金化AuGe / Ni触点的GaAs / AlGaAs量化霍尔电阻的性能下降
7. Characteristics of GaAsNGaAsSb type-II quantum wells grown by metalorganic vapor phase epitaxy on GaAs substrates [O] . Khandekar, Anish A., Hawkins, Brian E., Kuech, Thomas F., 2005

机译：Gaas衬底上金属有机气相外延生长的GaasNGaassb II型量子阱的特性
8. A PROUS SUBSTRATE RESISTOR AIMED AT MINIATURIZATION OF METAL-FILM RESISTORS [R] . T. Matley 1965

机译：一种基板电阻器，用于金属膜电阻的微型化

Metal resistor bolometer on GaAs substrate

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