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HIGHLY REFLECTIVE INTERMEDIATE LAYERS IN CRYSTALLINE SILICON THIN FILM SOLAR CELL

机译:晶体硅薄膜太阳能电池中的高反射中间层

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In this paper the applicability and efficiency of different intermediate layer (IL) stacks for the implementation in recrystallized wafer equivalent (RexWE) solar cells are investigated. The requirements for the IL in the RexWE concept are short term stability at temperatures above 1400 °C, high reflectivity for wavelengths exceeding 600 nm, electrical conductivity and acting as a diffusion barrier against metallic impurities. Various combinations of stoichiometric SiC layers, silicon rich SiC layers and SiO_2 layers were tested as IL stacks regarding their performance after a zone melting recrystallization (ZMR) process. For the first time, samples with an IL consisting of a SiC multilayer were recrystallized and successfully processed to solar cells.
机译:在本文中,研究了不同中间层(IL)堆栈在再结晶晶片等效(RexWE)太阳能电池中实现的适用性和效率。 RexWE概念中对IL的要求是:在1400°C以上的温度下具有短期稳定性,对于超过600 nm的波长具有高反射率,具有导电性并且可作为对金属杂质的扩散阻挡层。将化学计量的SiC层,富硅的SiC层和SiO_2层的各种组合作为IL堆栈进行了测试,以了解它们在区域熔融重结晶(ZMR)工艺之后的性能。首次将具有由SiC多层膜组成的IL的样品重结晶并成功加工成太阳能电池。

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