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首页> 外文会议>Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE >Study on the nano-crystalline Si embedded ZnO thin films for solar cell application
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Study on the nano-crystalline Si embedded ZnO thin films for solar cell application

机译：纳米晶硅嵌入ZnO薄膜在太阳能电池中的应用研究

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摘要

The characteristics of nano-crystalline silicon (nc-Si) embedded in Si-based dielectric matrix have been investigated extensively. However, these Si-based dielectric materials have the highly-resistive nature and difficulty in building up the built-in electric field, which limit the performances of nc-Si thin films for solar cell (SC) application. In this study, we propose to use ZnO as a new matrix material for the nc-Si thin films with better optoelectronic properties because of the unique characteristics of ZnO. We successfully demonstrate the formation of nc-Si embedded in ZnO thin films using a ZnO/Si multilayer (ML) structure by radio-frequency (RF) magnetron sputtering method. From the high-resolution transmission electron microscope (HRTEM) images, we clearly observe the amorphous Si (a-Si) nano-clusters after deposition and high density of nano-crystalline clusters after annealing in the ZnO/Si ML structure. From atomic force microscope (AFM) images, significant variations on the surface morphologies are observed under different Si sputtering powers (PSi) after deposition. The larger surface roughness and clearer formation of a-Si nano-clusters are observed for PSi higher than 75 W. Combined with the Raman spectra and X-ray diffraction patterns, the results indicate that the sputtered Si atoms with higher PSi have more kinetic energy to aggregate together and are easier to form a-Si nano-clusters during deposition. Such morphology is helpful for the nc-Si formation and the better crystallization of the ZnO matrix during annealing. Thus, high density of nano-crystalline clusters is observed in the HRTEM images after annealing. Our experimental results show the nc-Si embedded ZnO thin film is certainly achievable, and a high conversion efficiency SC integrating nc-Si thin film with ZnO matrix can be expected.
机译：广泛研究了嵌入在硅基介电基质中的纳米晶硅（nc-Si）的特性。然而，这些基于硅的介电材料具有高电阻性质并且难以建立内置电场，这限制了用于太阳能电池（SC）应用的nc-Si薄膜的性能。在这项研究中，由于ZnO的独特特性，我们建议使用ZnO作为具有更好的光电性能的nc-Si薄膜的新型基质材料。我们成功地证明了通过射频（RF）磁控溅射方法使用ZnO / Si多层（ML）结构在ZnO薄膜中嵌入nc-Si的形成。从高分辨率透射电子显微镜（HRTEM）图像中，我们可以清楚地观察到沉积后的非晶Si（a-Si）纳米簇和在ZnO / Si ML结构中退火后的高密度纳米晶簇。从原子力显微镜（AFM）图像，在沉积后，在不同的Si溅射功率（PSi）下观察到了表面形态的显着变化。高于75 W的PSi观察到较大的表面粗糙度和a-Si纳米团簇的形成更清晰。结合拉曼光谱和X射线衍射图谱，结果表明，具有较高PSi的溅射Si原子具有更多的动能。聚集在一起，并且在沉积过程中更容易形成a-Si纳米簇。这种形态有助于退火过程中nc-Si的形成和ZnO基体的更好结晶。因此，退火后在HRTEM图像中观察到高密度的纳米晶体簇。我们的实验结果表明，肯定可以实现nc-Si嵌入的ZnO薄膜，并且可以期望将nc-Si薄膜与ZnO基体集成在一起的高转换效率SC。

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