首页> 外文会议>Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE >Effect of elastic strain on band edge alignment and position of intermediate band of isolated and coupled quantum dots
【24h】

Effect of elastic strain on band edge alignment and position of intermediate band of isolated and coupled quantum dots

机译:弹性应变对孤立的和耦合的量子点的能带边缘对准和中间带位置的影响

获取原文
获取原文并翻译 | 示例

摘要

Solar cells with quantum dot nanostructure absorbing medium have a potential to overcome single junction limit and achieve the solar energy conversion efficiency up to 63%. Self-assembled quantum dots that are grown by using molecular beam epitaxy(MBE) or metal organic chemical vapor deposition (MOCVD) have significant effect of strain on the band edge alignment and hence the confinement potential of electrons and holes. The energetic positions of confined energy states in quantum dots, which, act as intermediate state or band in intermediate band solar cells (IBSCs) are strongly affected by the strain in and around a quantum dot (QD). This work is focused on the calculation of strain distribution and its effect on band structure of QD array for its potential application in quantum dot intermediate band solar cells (QDIBSCs). Strain distribution in and around a QD is calculated using continuum theory of elasticity. When the inter-dot distance in the growth direction is sufficiently close, there is the interaction in strain distribution of QD layers. The strain distribution due to a vertically aligned QD array is calculated from superposition of the strain due to single quantum dot. The strain calculated this way is given as input for the calculation of band edge alignment and the position of QD confined states.
机译:具有量子点纳米结构吸收介质的太阳能电池具有克服单结极限并实现高达63%的太阳能转换效率的潜力。通过使用分子束外延(MBE)或金属有机化学气相沉积(MOCVD)生长的自组装量子点对能带边缘对准具有很大的应变影响,因此对电子和空穴的约束势也有很大影响。量子点中作为中间态或中带的量子点中受限能态的高能位置受到量子点(QD)及其周围的应变的强烈影响。这项工作集中于应变分布的计算及其对量子点阵列的能带结构的影响,以便将其潜在地应用在量子点中间能带太阳能电池(QDIBSC)中。使用连续性弹性理论计算QD内和周围的应变分布。当在生长方向上的点间距离足够接近时,在QD层的应变分布中存在相互作用。由垂直排列的QD阵列引起的应变分布是根据单个量子点引起的应变叠加计算得出的。以此方式计算出的应变作为输入,用于计算带边缘对齐和QD约束状态的位置。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号