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首页> 外文会议>Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE >The effect of internal stresses on the recombination activity of structural defects in multi-crystalline solar silicon
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The effect of internal stresses on the recombination activity of structural defects in multi-crystalline solar silicon

机译：内应力对多晶太阳能硅中结构缺陷复合活性的影响

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摘要

Internal stresses in multi-crystalline silicon (mc-Si) materials for solar cells are the result of the superposition between the thermally induced residual stresses and the defect-related stresses. In the present contribution, we attempt to clarify the influence of internal stresses on the electrical activity of extended structural defects in edge-defined film-feed (EFG) ribbons and block-cast mc-Si wafers. For this purpose, we apply at identical positions a combination of micro-Raman, electron beam induced current (EBIC), defect etching, and electron backscatter diffraction (EBSD) techniques. Since the materials are cut into wafers and then into small pieces, the thermally induced residual stresses relax to a large extent by the creation of free surfaces. Thus, the measured internal stresses are mainly produced by defects. These stresses are too small (several tens of MPa) to influence directly the electrical activity, but they can enhance it via stress-induced accumulation of metallic impurities at defects.
机译：用于太阳能电池的多晶硅（mc-Si）材料中的内部应力是热诱导的残余应力和与缺陷相关的应力之间叠加的结果。在当前的贡献中，我们试图阐明内部应力对边缘限定的薄膜进给（EFG）色带和块铸mc-Si晶片中扩展结构缺陷的电活动的影响。为此，我们在相同的位置应用微拉曼，电子束感应电流（EBIC），缺陷蚀刻和电子背散射衍射（EBSD）技术的组合。由于将材料切成薄片，然后切成小块，因此，热诱导的残余应力会通过形成自由表面而在很大程度上松弛。因此，所测量的内部应力主要由缺陷产生。这些应力太小（数十MPa），无法直接影响电活动，但它们可以通过应力引起的缺陷处金属杂质的积聚来增强电活动。

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