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InGaAsP/InP Diode Laser Pumping Sources for Eye-Safe Solid-State and Fiber Lasers

机译：适用于人眼安全的固态和光纤激光器的InGaAsP / InP二极管激光泵浦源

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摘要

Record high power InP-based diode laser pumps operating at 1450 nm and 1850 nm have been fabricated and tested. Single-element 100 μm stripe lasers and 1 cm long arrays (both with cavity length of 2-2.5 mm) are appropriate for fiber and bulk solid-state laser pumping, respectively. The differential quantum efficiency for 1450 nm lasers was 55% and 47% for1850 nm emitters. The maximum CW output powers for 1 cm diode arrays are 42 W for 1450 nm and 14 W for 1850 nm wavelength ranges. The output photon flow (per facet) at maximum current for 1450 nm sources is 40% higher than that for commercial GaAs-based emitters, while for 1850 nm sources it is 50 % lower. A simple estimation shows that the parameters achieved for 1450 nm diode lasers could provide overall efficiency for an 1640 nm Er~(3+):YAG laser with InP-based pumping comparable with that of a GaAs laser pumped Er~(3+):YAG laser. More importantly, the expected active media overheating in the case of InP-based pumping is lower by an order of magnitude compared to a GaAs laser pumped Er~(3+):YAG laser. Data on the lifetime for InP-based diode arrays confirm that high reliability is an additional advantage of long wavelength pumps compared to traditional GaAs-based pumps.
机译：已制造并测试了在1450 nm和1850 nm下运行的创纪录的基于InP的高功率二极管激光泵。单元件100μm条纹激光器和1 cm长的阵列（均具有2-2.5 mm的腔长）分别适合于光纤和整体固态激光器泵浦。 1450 nm激光器的差分量子效率对于1850 nm发射器而言分别为55％和47％。 1 cm二极管阵列的最大CW输出功率在1450 nm处为42 W，在1850 nm波长范围内为14W。 1450 nm光源在最大电流下的输出光子流（每面）比商用GaAs基发射器高40％，而1850 nm光源的输出光子流低50％。一个简单的估算表明，用1450 nm二极管激光器实现的参数可以为1640 nm Er〜（3 +）：YAG激光器提供基于InP泵浦的整体效率，与GaAs激光器泵浦Er〜（3+）的效率相当： YAG激光。更重要的是，与基于GaAs激光泵浦的Er〜（3 +）：YAG激光器相比，在基于InP的泵浦情况下预期的活性介质过热降低了一个数量级。基于InP的二极管阵列的寿命数据证实，与传统的基于GaAs的泵浦相比，长波长泵浦具有更高的可靠性。

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