Intraband carrier dynamics in InAs/GaAs quantum dots studied by two-color excitation spectroscopy

机译：通过双色激发光谱研究InAs / GaAs量子点中的带内载流子动力学

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We have studied time-resolved intraband transition from the intermediate state to the continuum state of the conduction band in InAs/GaAs self-assembled quantum dots embedded in a one-dimensional photonic cavity structure using a two-color photoexcitation spectroscopy. The photonic gap was tuned to enhance the excitation from the intermediate state to the conduction band, whose energy is selected to be less than the interband transition energy between the intermediate state and the quantized hole state. The photoluminescence intensity was observed to be dramatically reduced by selectively pumping carriers in the intermediate state. This effect has been analyzed by modeling detailed carrier relaxation process.

机译：我们已经使用二色光激发光谱研究了嵌入一维光子腔结构中的InAs / GaAs自组装量子点中从导带的中间状态到导带的连续状态的时间分辨带内跃迁。调整光子间隙以增强从中间态到导带的激发，该导带的能量被选择为小于中间态和量子化的空穴态之间的带间跃迁能。观察到通过有选择地泵送处于中间状态的载流子，光致发光强度显着降低。已通过对详细的载流子松弛过程进行建模来分析此效果。

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来源
《Physics, simulation, and photonic engineering of photovoltaic devices II》|2013年|862008.1-862008.7|共7页
会议地点 San Francisco CA(US)
作者
Yukihiro Harada; Tsuyoshi Maeda; Takashi Kita;
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作者单位

Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, 1-1 Rokkodai, Nada, Kobe 657-8501, Japan;

Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, 1-1 Rokkodai, Nada, Kobe 657-8501, Japan;

Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, 1-1 Rokkodai, Nada, Kobe 657-8501, Japan;

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原文格式 PDF
正文语种 eng
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关键词
intermediate band solar cell; quantum dot; photonic cavity; carrier dynamics; InAs;

机译：中频太阳能电池量子点光子腔载体动力学；铟砷;

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专利

1. Intraband carrier dynamics in InAs/GaAs quantum dots stimulated by bound-to-continuum excitation [J] . Yukihiro Harada, Tsuyoshi Maeda, Takashi Kita Journal of Applied Physics . 2013,第22期

机译：束缚连续激发在InAs / GaAs量子点中的带内载流子动力学
2. Carrier transport in self-organized InAs/GaAs quantum-dot structures studied by single-dot spectroscopy [J] . E. S. Moskalenko, M. Larsson, W. V. Schoenfeld, Physical review. B, Condensed Matter And Materials Physics . 2006,第15期

机译：单点光谱研究自组织InAs / GaAs量子点结构中的载流子传输
3. Carrier dynamics of the intermediate state in InAs/GaAs quantum dots coupled in a photonic cavity under two-photon excitation [J] . Takashi Kita, Tsuyoshi Maeda, Yukihiro Harada Physical review . 2012,第3期

机译：双光子激发下耦合在光子腔中的InAs / GaAs量子点中的中间态的载流子动力学
4. Carrier dynamics of electrons in n-type modulation-doped InAs/GaAs quantum dot structure studied using THz time-domain spectroscopy [C] . Seung Jae Oh, Chul Kang, In Hee Maeng, International Conference on the Physics of Semiconductors . 2007

机译：使用THz时域光谱研究的N型调制掺杂INAS / GAAS量子点结构中电子的载体动力学
5. Interfacial Electron Transfer Dynamics from Single Molecules and Quantum Dots Studied by Single-Molecule Fluorescence Spectroscopy. [D] . Jin, Shengye. 2010

机译：通过单分子荧光光谱研究单分子和量子点的界面电子转移动力学。
6. Photoluminescence of InAs/GaAs quantum dots under direct two-photon excitation [O] . Xian Hu, Yang Zhang, Dorel Guzun, -1

机译：直接双光子激发下InAs / GaAs量子点的光致发光
7. Intraband carrier dynamics in InAs/GaAs quantum dots stimulated by bound-tocontinuum excitation [O] . Harada Yukihiro, Maeda Tsuyoshi, Kita Takashi 2013

机译：束缚连续谱激发在InAs / GaAs量子点中的带内载流子动力学

Intraband carrier dynamics in InAs/GaAs quantum dots studied by two-color excitation spectroscopy

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