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首页> 外文会议>Physics, simulation, and photonic engineering of photovoltaic devices II >Effect of grain boundary on nanoscale electronic properties of hydrogenated nanocrystalline silicon studied by Kelvin probe Force Microscopy
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Effect of grain boundary on nanoscale electronic properties of hydrogenated nanocrystalline silicon studied by Kelvin probe Force Microscopy

机译：用开尔文探针力显微镜研究晶界对氢化纳米晶硅纳米级电子性能的影响

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Hydrogenated nanocrystalline silicon (nc-Si:H) based alloys have strong potential in cost-effective and flexible photovoltaics. However, nc-Si:H undergoes light induced degradation (LID), which degrades the device efficiency by over 15%. The microstructural processes responsible for the LID are still under debate. Several recent studies suggest that the generation of metastable defects at grain/ grain-boundary (GB) interface enhances density of traps, which limits the charge collection efficiency. Conventional characterization techniques can measure transport properties such as electrical conductivity or carrier mobility averaged over large sample volumes. However, nanoscale characterization tools, such as Scanning Kelvin probe Force Microscopy (KFM), reveal local electronic properties of grains and GBs which may lead to better understanding of microscopic process of metastability. The optoelectronic properties of nc-Si:H films were measured in dark and under illumination to study the effect of LID at the nanoscale. The surface potential and charge distribution were measured in as-deposited and photo-degraded samples using a custom-designed scanning probe microscopy tool installed in an environment controlled glove-box. Photodegradation resulted in an upward bending of the conduction band edge, suggesting accumulation of photo-generated charges at GBs. This effect is attributed to the generation of acceptor like defects (traps) at GBs during illumination. Density of defects is estimated from grain/GB width and absolute value of band bending.
机译：氢化纳米晶硅（nc-Si：H）基合金在具有成本效益的柔性光伏电池中具有强大的潜力。但是，nc-Si：H经历了光诱导降解（LID），使器件效率降低了15％以上。负责LID的微观结构过程仍在争论中。最近的一些研究表明，在晶粒/晶粒边界（GB）界面处产生亚稳态缺陷会增加陷阱的密度，从而限制了电荷收集效率。传统的表征技术可以测量在大样品体积上平均的传输性能，例如电导率或载流子迁移率。但是，纳米级的表征工具，例如扫描开尔文探针力显微镜（KFM），揭示了晶粒和GB的局部电子特性，这可能导致人们更好地了解亚稳的微观过程。在黑暗和光照下测量nc-Si：H薄膜的光电性能，以研究LID在纳米级的影响。使用安装在环境可控手套箱中的定制设计的扫描探针显微镜工具，可以测量沉积和光降解样品中的表面电势和电荷分布。光降解导致导带边缘向上弯曲，表明光生电荷在GBs处积累。该效应归因于在照明期间在GB处产生受体样缺陷（陷阱）。根据晶粒/ GB宽度和带弯曲的绝对值来估计缺陷的密度。

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