Modification of band alignment at interface of Al_yGa_(1-y)Sb/Al_xGa_(1-x)As type-Ⅱ quantum dots by concentrated sunlight in intermediate band solar cells with separated absorption and depletion regions

著录项

• 来源
  《Physics, simulation, and photonic engineering of photovoltaic devices II》|2013年|86200K.1-86200K.7|共7页
• 会议地点 San Francisco CA(US)
• 作者

  A. Kechiantz; A. Afanasev; J.-L. Lazzari;

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• 作者单位

  Dept of Physics, The George Washington Univ., 725 21st Street, NW, Washington, DC, USA, 20052,Institute of Radiophysics and Electronics, National Academy of Sciences, 1 Brothers Alikhanyan St., Ashtarak 0203, Armenia;

  Dept of Physics, The George Washington Univ., 725 21st Street, NW, Washington, DC, USA, 20052;

  Centre Interdisciplinaire de Nanoscience de Marseille, CINaM, UMR 7325 CNRS - Aix-Marseille Universite, Campus de Luminy, Case 913, 163 Avenue de Luminy, 13288 Marseille Cedex 9, France;

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• 会议组织
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  Intermediate Band Solar Cells; GaSb/GaAs type Ⅱ Quantum Dots; High-Efficiency;

  机译：中频带太阳能电池； GaSb / GaAsⅡ型量子点；高效率;