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首页> 外文会议>Physics, simulation, and photonic engineering of photovoltaic devices II >Simulation of Radiation Effects in Solar Cells: DLTS vs. SRIM for Trap Data
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Simulation of Radiation Effects in Solar Cells: DLTS vs. SRIM for Trap Data

机译：模拟太阳能电池的辐射效应：陷阱数据的DLTS与SRIM

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摘要

We present a predictive computational approach that may reduce the need for extensive inputs from Deep Level Transient Spectroscopy (DLTS) experiments. Three-dimensional NanoTCAD simulations are used for physics-based prediction of space radiation effects in a p~+n GaAs solar cell with AlGaAs window, and validated with experimental data. The computed dark and illuminated Ⅰ-Ⅴ curves, as well as corresponding performance parameters, matched experimental data very well for 2 MeV proton irradiation at various fluence levels. We analyze the role of majority vs. minority and deep vs. shallow carrier traps in the solar cell performance degradation. The defects level parameters used in the simulations were taken from DLTS data obtained at NRL. It was determined from numerical simulations that the degradation of the photovoltaic parameters could be modeled and showed similar trends when a only a single deep level defect was considered compared to a spectrum of defect levels. This led to the development of an alternate method to simulate the degradation of a solar cell by using only a single deep level defect whose density is calculated by the Stopping and Range of Ions in Matter (SRIM) code. Using SRIM, we calculated the number of vacancies produced by 2 MeV proton irradiation for fluence levels ranging from 6×10~(10) cm~(-2) to 5×10~(12) cm~(-2). Based on the SRIM results, we applied trap models in NanoTCAD and performed I-V simulations from which the degradation of the photovoltaic parameters (I_(sc), V_(oc), FF, P_(max)) was calculated. The simulations using SRIM-derived defect concentrations showed reasonable agreement with simulations using parameters determined from DLTS.
机译：我们提出了一种预测性计算方法，该方法可以减少来自深层瞬态光谱（DLTS）实验的大量输入的需求。三维NanoTCAD模拟用于基于物理学的具有AlGaAs窗口的p〜+ n GaAs太阳能电池中空间辐射效应的预测，并已通过实验数据进行了验证。计算得到的深色和照亮的Ⅰ-Ⅴ曲线以及相应的性能参数，与不同通量水平下2 MeV质子辐照的实验数据非常吻合。我们分析了多数与少数和深与浅的载流子陷阱在太阳能电池性能下降中的作用。模拟中使用的缺陷级别参数是从NRL获得的DLTS数据中获取的。从数值模拟可以确定，当仅考虑一个深层缺陷与一系列缺陷水平相比时，可以模拟光伏参数的退化并显示相似的趋势。这导致了另一种方法的发展，该方法仅使用单个深层缺陷来模拟太阳能电池的退化，该缺陷的密度由物质的停止和离子范围（SRIM）代码计算。使用SRIM，我们计算了2 MeV质子辐照在6×10〜（10）cm〜（-2）到5×10〜（12）cm〜（-2）范围内的空位数量。基于SRIM结果，我们在NanoTCAD中应用了陷阱模型，并进行了I-V模拟，由此计算了光伏参数（I_（sc），V_（oc），FF，P_（max））的下降。使用SRIM衍生的缺陷浓度进行的模拟与使用DLTS确定的参数进行的模拟显示出合理的一致性。

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